Allicdata Part #: | IHW40T60FKSA1-ND |
Manufacturer Part#: |
IHW40T60FKSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 600V 80A 303W TO247-3 |
More Detail: | IGBT Trench Field Stop 600V 80A 303W Through Hole ... |
DataSheet: | IHW40T60FKSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Switching Energy: | 920µJ |
Supplier Device Package: | PG-TO247-3 |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Reverse Recovery Time (trr): | 143ns |
Test Condition: | 400V, 40A, 5.6 Ohm, 15V |
Td (on/off) @ 25°C: | -/186ns |
Gate Charge: | 215nC |
Input Type: | Standard |
Series: | TrenchStop® |
Power - Max: | 303W |
Vce(on) (Max) @ Vge, Ic: | 2.05V @ 15V, 40A |
Current - Collector Pulsed (Icm): | 120A |
Current - Collector (Ic) (Max): | 80A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | Trench Field Stop |
Part Status: | Obsolete |
Packaging: | Tube |
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The IHW40T60FKSA1 is a fully-fledged Insulated Gate Bipolar Transistor (IGBT) module. Manufactured by Infineon Technologies, this device offers an exceptional power handling capabilities with its single-chip IGBT technology. It contains both the gate driver and the high-voltage transistor integrated onto a single package.
This device is primarily used for medium-voltage applications such as solar inverters, UPS systems, renewable energy systems, motor drives, telecom and industrial applications. It is optimised to provide exceptional efficiency, reliability and safety. This application of the IHW40T60FKSA1 allows for a robust, safe, and high performance system that is optimised for rapid deployment.
The IHW40T60FKSA1 is built with a high current carrying capacity and offers excellent modulation performance. It is also designed to handle high switching frequencies. The device has all the safety features that are required in high-voltage applications including short circuit protection, over/under voltage protection, and overload/thermal protection.
The IHW40T60FKSA1 utilizes Infineon\'s MOS-based technologies which offer a reliable, safe and power dense solution to its users. This module is built with an embedded driver IC which is responsible for controlling the IGBT module and supplying the necessary current to the device. This driver IC is also responsible for providing precision control over the IGBT\'s switching frequency and for monitoring and protecting the IGBT from damaging overcurrent, thermal or voltage conditions.
The working principle of the IHW40T60FKSA1 is based on the principle of semiconductor switching. When the gate of the device is activated, the current passes through the semiconductor and is controlled by the gate voltage applied. This is done in order to regulate the current flow through the IGBT. When the voltage at the gate reaches its turn-on threshold, the current flows and the device is activated. When the voltage falls back below the turn-off threshold, the device is deactivated.
The IHW40T60FKSA1 is an ideal choice for applications that require a robust and reliable solution. With its high switching frequency and the various safety features integrated into the module, it offers a safe, reliable, and power dense solution for a variety of applications. Additionally, its small size and easy-to-use package makes it an excellent choice for a wide range of devices.
The specific data is subject to PDF, and the above content is for reference
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