Allicdata Part #: | IHW40T120FKSA1-ND |
Manufacturer Part#: |
IHW40T120FKSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 1200V 75A 270W TO247-3 |
More Detail: | IGBT Trench Field Stop 1200V 75A 270W Through Hole... |
DataSheet: | IHW40T120FKSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Switching Energy: | 6.5mJ |
Supplier Device Package: | PG-TO247-3 |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Reverse Recovery Time (trr): | 195ns |
Test Condition: | 600V, 40A, 15 Ohm, 15V |
Td (on/off) @ 25°C: | 48ns/480ns |
Gate Charge: | 203nC |
Input Type: | Standard |
Series: | TrenchStop® |
Power - Max: | 270W |
Vce(on) (Max) @ Vge, Ic: | 2.3V @ 15V, 40A |
Current - Collector Pulsed (Icm): | 105A |
Current - Collector (Ic) (Max): | 75A |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
IGBT Type: | Trench Field Stop |
Part Status: | Obsolete |
Packaging: | Tube |
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The IHW40T120FKSA1 is an IGBT (insulated-gate bipolar transistor) module designed to provide reliable power switching solutions. It is a three-phase device with a high-speed and high-current rating, capable of switching up to 1300V and 70A per phase. It is an ideal choice for many applications which require fast switching and high current. This article will discuss the application field and working principle of the IHW40T120FKSA1.
Application Field
The IHW40T120FKSA1 is primarily designed for motor control applications. It is capable of driving high-current switched systems and offers excellent efficiency and power savings. Its high-speed switching capability makes it ideal for controlling the current in brushless motors, like those used for e-bikes, opening/closing doors, and other applications. The IHW40T120FKSA1 can also be used in inverter applications such as AC/DC power inverters and UPS (uninterrupted power supply) inverters.
Working Principle
The working principle of the IHW40T120FKSA1 is based on the principle of insulated-gate bipolar transistor (IGBT). It uses power devices that employ a combination of MOSFET (metal-oxide-semiconductor field-effect transistor) and bipolar transistor. IGBTs are designed to be fast and efficient by providing excellent noise immunity, low switching losses, and high current-handling capability. When a voltage is applied to the gate, a conducting path is created between the drain and the source, allowing current to pass through the IGBT. The gate-source voltage determines the amount of current that can flow through the IGBT. When the voltage is reversed, the current is no longer able to flow, and the IGBT is switched off.
The IHW40T120FKSA1 IGBT module has been designed to provide an improved solution for high-power switching. It is fast, efficient, and offers excellent current-handling capabilities. Its reliable performance and wide operating temperature make it ideal for motor control, inverters, and other applications requiring high-speed switching.
The specific data is subject to PDF, and the above content is for reference
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