Allicdata Part #: | IKP03N120H2XKSA1-ND |
Manufacturer Part#: |
IKP03N120H2XKSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 1200V 9.6A 62.5W TO220-3 |
More Detail: | IGBT 1200V 9.6A 62.5W Through Hole PG-TO220-3 |
DataSheet: | IKP03N120H2XKSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
IGBT Type: | -- |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 9.6A |
Current - Collector Pulsed (Icm): | 9.9A |
Vce(on) (Max) @ Vge, Ic: | 2.8V @ 15V, 3A |
Power - Max: | 62.5W |
Switching Energy: | 290µJ |
Input Type: | Standard |
Gate Charge: | 22nC |
Td (on/off) @ 25°C: | 9.2ns/281ns |
Test Condition: | 800V, 3A, 82 Ohm, 15V |
Reverse Recovery Time (trr): | 42ns |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO220-3 |
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The IKP03N120H2XKSA1 is a single, short-circuit withstand IGBT chip, commonly used in industrial and automotive applications. This type of transistor has the ability to handle high amounts of power while maintaining a high efficiency rate. It is highly reliable and offers a wide thermal and current range.
The main application field of IKP03N120H2XKSA1 is for high current and power applications, such as automotive systems, motors and home appliances. This type of transistor is particularly suitable for applications that require high efficiency, improved thermal performance and stable performance. Furthermore, its wide voltage ratings and robust electrical and thermal capabilities makes it suitable for a variety of different applications.
The working principle of IKP03N120H2XKSA1 is based on controlled current flow and voltage transfer between two terminals. The control current is driven by a gate. The IKP03N120H2XKSA1 has a high current carrying capacity and excellent thermal characteristics. Its low gate drive current and built-in protection mechanisms ensure reliability, proper handling and long lifetime without any major maintenance requirements.
The IKP03N120H2XKSA1 has a high frequency switching capability. This feature makes it possible to switch voltage and current to reduce losses and improve response, making it suitable for high speed applications. It also has a low gate drive current and short circuit protection for stable operation. The high common mode rejection ratio reduces noise and improves interference immunity, making it suitable for noisy environments.
The IKP03N120H2XKSA1 is also used in high voltage applications, such as automotive applications. It has excellent ruggedness and short circuit withstand capability. Its high voltage capability allows for safe operation in hazardous environments, such as automotive systems.
In conclusion, the IKP03N120H2XKSA1 is a single, short-circuit withstand IGBT chip, commonly used in industrial and automotive applications due to its high current carrying capacity and excellent thermal characteristics. Its high frequency switching capability makes it suitable for high speed applications, while its high voltage capability allows for safe operation in hazardous environments. The low gate drive current and built-in protection mechanisms ensure reliability and proper handling. Therefore, the IKP03N120H2XKSA1 is a reliable and efficient choice for high current and power applications.
The specific data is subject to PDF, and the above content is for reference
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