IKP08N65F5XKSA1 Discrete Semiconductor Products |
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Allicdata Part #: | IKP08N65F5XKSA1-ND |
Manufacturer Part#: |
IKP08N65F5XKSA1 |
Price: | $ 1.38 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 650V 18A 70W PG-TO220-3 |
More Detail: | IGBT 650V 18A 70W Through Hole TO-220-3 |
DataSheet: | IKP08N65F5XKSA1 Datasheet/PDF |
Quantity: | 206 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | $ 1.25370 |
10 +: | $ 1.12581 |
100 +: | $ 0.90512 |
Power - Max: | 70W |
Supplier Device Package: | TO-220-3 |
Package / Case: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Reverse Recovery Time (trr): | 41ns |
Test Condition: | 400V, 4A, 48 Ohm, 15V |
Td (on/off) @ 25°C: | 10ns/116ns |
Gate Charge: | 22nC |
Input Type: | Standard |
Switching Energy: | 70µJ (on), 20µJ (off) |
Series: | TrenchStop® |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 8A |
Current - Collector Pulsed (Icm): | 24A |
Current - Collector (Ic) (Max): | 18A |
Voltage - Collector Emitter Breakdown (Max): | 650V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
An IKP08N65F5XKSA1 is a high-performance insulated gate bipolar transistor (IGBT) module produced by Infineon. As one of Infineon\'s new products, the IKP08N65F5XKSA1 is based on the latest generation of IGBTs, featuring low insertion loss, fast switching speed, and high current handling capacity.
The IKP08N65F5XKSA1 is mainly used in applications where high power and high switching speed is needed. These include motor control, solar inverters, uninterruptible power supplies, UPSs, grid-tied solar inverters, drives, welding, and chargers. The IKP08N65F5XKSA1 also features low dissipation,fast switching speed and high current capacity, enabling it to perform reliably in a wide variety of demanding applications.
The IKP08N65F5XKSA1 is a single transistor module, which means that the devices will only require a single power supply for operation. This module has a maximum voltage rating of 650 volts and a continuous current rating of 25 amps. It is capable of carrying a peak pulse current of 200 A in a repetitive mode.
The IKP08N65F5XKSA1 works by allowing current to flow when the gate voltage reaches a threshold level. This also allows for a fast switching speed and can be used to turn on or turn off devices quickly, making it ideal for applications that require fast switching. The IKP08N65F5XKSA1 has a high efficiency level, which means that it can convert electrical energy into mechanical energy or heat energy with minimal wastage.
The IKP08N65F5XKSA1 features a high degree of thermal stability, which allows it to withstand high temperatures while operating. This makes the IKP08N65F5XKSA1 one of the most reliable IGBTs in its class, offering superior performance in harsh environmental conditions. It also features short circuit protection and redundant design for improved reliability.
In conclusion, the IKP08N65F5XKSA1 is a high-performance insulated gate bipolar transistor (IGBT) module that is ideal for applications where high power and high switching speed is needed. It offers superior performance in harsh environmental conditions and features short circuit protection and redundant design for improved reliability. The IKP08N65F5XKSA1 is capable of carrying a peak pulse current of 200 A in a repetitive mode and has a high degree of thermal stability, making it the perfect choice for applications that require fast switching and high current capability.
The specific data is subject to PDF, and the above content is for reference
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