IKP06N60TXKSA1

The IKP06N60TXKSA1 belongs to the range of single insulated gate bipolar transistors (IGBTs) manufactured and distributed by Infineon Technologies. It is designed to enable the realization of high power switching applications in a wide range of industrial and consumer electronics devices. The extremely low on-state resistance and high current handling capability of this device makes it suitable for efficiently controlling large motor drives, automotive and domestic appliances, telecommunications and AC/DC power supplies.IGBTs are devices that combine the best features of both bipolar transistors and MOSFETs. They are, essentially, hybrid power semiconductor devices that have a main advantage of providing extremely low ‘on’ state resistance and very low switching losses. This is due to the fact that both types of devices, the bipolar transistors and MOSFETs, are present within the same IGBT chip and work together to realize high power switching in different requirements.The IKP06N60TXKSA1 has an output voltage rating of 600V, a maximum collector current rating of 6A and an on-resistance configuration of specificially 1600mΩ at a junction temperature of 150°C. It is designed to operate with a minimum turn-on voltage of 11.2V, a maximum turn-off voltage of 5.5V and a typical turn-on delay time of 10µs. This device is manufactured using a special die that has been optimized for enhanced performance characteristics, such as faster electrical operation.The IKP06N60TXKSA1 is implemented using Infineon’s proprietary Smart Power Technology, which features sophisticated protection and cooling circuits to ensure robustness, long-term reliability, and minimization of power losses. It also features a built-in temperature sensing mechanism, which accurately measures the junction temperature in order to dissipate heat efficiently.The working principle of the IKP06N60TXKSA1 is based on a combination of unique electrical characteristics that reduce power losses and improve efficiency. The operation of the device is based on the interaction between two MOSFETs and a bipolar transistor. When a voltage is applied across the IGBT’s gate and collector, the MOSFETs become conductive and the bipolar transistor operates within its active region. This allows current to flow from the collector to the emitter and the voltage and current applied to the gate is transferred to the collector. This, in turn, causes the IGBT to switch off and in doing so enables high power switching. The IKP06N60TXKSA1 is an ideal device for a wide range of applications that require efficient and high power switching, such as motor drives, DC/AC power supplies, automotive and consumer electronics. It is robust, reliable and cost-effective and provides excellent performance for high power switching requirements.

IKP04N60TXKSA1	Infineon Tec...	0.63 $	1000	IGBT 600V 8A 42W TO220-3I...
IKP06N60TXKSA1	Infineon Tec...	0.64 $	1000	IGBT 600V 12A 88W TO220-3...
IKP08N65F5XKSA1	Infineon Tec...	1.38 $	206	IGBT 650V 18A 70W PG-TO22...
IKP08N65H5XKSA1	Infineon Tec...	1.38 $	1000	IGBT 650V 18A 70W PG-TO22...
IKP01N120H2XKSA1	Infineon Tec...	0.0 $	1000	IGBT 1200V 3.2A 28W TO220...
IKP03N120H2XKSA1	Infineon Tec...	0.0 $	1000	IGBT 1200V 9.6A 62.5W TO2...