IKW20N60TAFKSA1 Discrete Semiconductor Products

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The IKW20N60TAFKSA1 (Slap-pak carrier) is a high voltage silicon IGBT insulated gate bipolar transistor (IGBT), primarily used in power electronics applications. This powerful IGBT is manufactured with a robust proprietary Field Stop (FS) IGBT technology with a trench gate structure that is optimized for high switching performance. This technology also enables extremely stable blocking and forward voltage characteristics by reducing the parasitic diodes of the device and limiting the power losses. The IKW20N60TAFKSA1 is rated for a forward voltage of 600V and a collector current of 20A. It is also capable of reaching pulse currents of up to 80A @25°C for short periods of time.

The IKW20N60TAFKSA1 can be used in a variety of applications, such as power supplies, motor control systems, soft starters, solar inverters, and uninterruptible power supplies. It is also used in consumer applications such as battery chargers, home appliances, computers, and mobile phones. This device is well-suited for these applications due to its low on-resistance, low forward voltage drop, high pulse current capability, and its high safety margin.

The IKW20N60TAFKSA1 IGBT works on a similar principle as a BJT, yet it combines many of the best properties of both a MOSFET and a BJT. It employs the same basic concept of operation as a BJT, but instead of the base current controlling the collector current, the gate-to-source voltage controls the collector current flow. When the device is forward biased, the junction between the collector and one of the two emitter terminals is forward biased, which allows current to flow, but when the device is reverse biased, the junction between the collector and one of the two emitter terminals is reverse biased, thus blocking current from flowing.

This IGBT is engineered to stand up to harsh environments and is capable of high pulse and blocking voltages. Its low thermal impedance and thermal management features enable it to handle higher levels of current and dissipate heat effectively, making it an excellent choice for a variety of power applications.

The IKW20N60TAFKSA1 IGBT is a great choice for power electronics applications, due to its low forward voltage drop, high pulse current capability, and high safety margin. Its robust FS IGBT technology enables this device to stand up to harsh environments, providing a reliable and durable option for power systems.

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