IKW20N60TFKSA1 Discrete Semiconductor Products |
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Allicdata Part #: | IKW20N60TFKSA1-ND |
Manufacturer Part#: |
IKW20N60TFKSA1 |
Price: | $ 2.62 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 600V 40A 166W TO247-3 |
More Detail: | IGBT Trench Field Stop 600V 40A 166W Through Hole ... |
DataSheet: | IKW20N60TFKSA1 Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | $ 2.37510 |
10 +: | $ 2.13129 |
100 +: | $ 1.74642 |
500 +: | $ 1.48670 |
1000 +: | $ 1.25385 |
Series: | TrenchStop® |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 40A |
Current - Collector Pulsed (Icm): | 60A |
Vce(on) (Max) @ Vge, Ic: | 2.05V @ 15V, 20A |
Power - Max: | 166W |
Switching Energy: | 770µJ |
Input Type: | Standard |
Gate Charge: | 120nC |
Td (on/off) @ 25°C: | 18ns/199ns |
Test Condition: | 400V, 20A, 12 Ohm, 15V |
Reverse Recovery Time (trr): | 41ns |
Operating Temperature: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | PG-TO247-3 |
Base Part Number: | *KW20N60 |
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IGBTs (Insulated Gate Bipolar Transistor) are high-power transistors designed for high-current applications such as in motor control and power conditioning. The IKW20N60TFKSA1 is an IGBT model developed by Infineon Technologies and is used in a variety of applications.
IKW20N60TFKSA1 Application Field
Due to its forced-commutated current capabilities, the IKW20N60TFKSA1 is widely used in motor control, power conditioning, and power conversion applications. It is also suitable for lighting applications such as LED lighting, and its low gates-drain charge makes it a great choice for high-frequency applications. The IKW20N60TFKSA1 is also used for various forms of heating and is suitable for welding applications.
IKW20N60TFKSA1 Working Principle
The IKW20N60TFKSA1 consists of two resistors and one device, referred to as a "transistor." The two resistors are connected to the source, which supplies voltage and current. The transistor itself consists of two electrodes, called the gate and the drain. When a sufficient amount of voltage is applied to the transistor label, the current can be rapidly changed by shifting the extra electrons from the drain to the gate. This process is known as forced-commutation, and it is one of the properties that allow the IKW20N60TFKSA1 to perform its various duties, such as controlling motor speed or changing the power output in a power converter.
The IKW20N60TFKSA1 also has a unique design that allows it to handle large currents without experiencing temperature drop. This is done by using insulated gate capacitors, which act as a barrier between the device and the power source. This ensures that the current does not drop below the minimum level, thus preventing overheating.
In conclusion, the IKW20N60TFKSA1 is a single IGBT model developed by Infineon Technologies. It is suitable for a variety of applications, such as motor control and power conditioning, and is able to handle large current levels without experiencing a temperature drop thanks to its advanced features. Its low gates-drain charge also makes it a great choice for high-frequency applications.
The specific data is subject to PDF, and the above content is for reference
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