IKW25N120H3FKSA1

Series:	TrenchStop®
Packaging:	Tube
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
IGBT Type:	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	50A
Current - Collector Pulsed (Icm):	100A
Vce(on) (Max) @ Vge, Ic:	2.4V @ 15V, 25A
Power - Max:	326W
Switching Energy:	2.65mJ
Input Type:	Standard
Gate Charge:	115nC
Td (on/off) @ 25°C:	27ns/277ns
Test Condition:	600V, 25A, 23 Ohm, 15V
Reverse Recovery Time (trr):	290ns
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	PG-TO247-3

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Article

An IKW25N120H3FKSA1 diode is a type of transistor known as an Isolated Gate Bipolar Transistor, or IGBT. This component is typically used to control a larger electronic component such as a motor or valve. The name “Isolated Gate Bipolar Transistor” comes from the component’s unique design which includes an insulated gate terminal and a bipolar structure. The gate terminal is used to control the current flow in the component while the bipolar structure is used to amplify the voltage and current flow.

The IKW25N120H3FKSA1 diode is a single component transistor which means that it has a single component package. Its single component package is TSSOP-8, which stands for Thin Small Outline Package with 8 lead terminals. The component is usually soldered onto a circuit board and is commonly used in applications such as AC/DC power supplies, switch mode power supplies, and pulse width modulation (PWM) inverters.

The IKW25N120H3FKSA1 diode typically has a maximum operating temperature of 150 degrees C, a maximum collector current of 25 Amperes, a maximum collector-emitter voltage (Vce) of 1200 volts, and a maximum junction temperature rating of 175 degrees C. This component is a very efficient and reliable power switch, which works by controlling the power flow in a circuit. When the voltage applied to the gate terminal exceeds a certain threshold, the component is turned on and current can pass from the collector to the emitter. When the voltage applied to the gate terminal drops below the threshold, the component is turned off and no current flows through the transistor. This mechanism is known as the ‘Gate Turn Off Mechanism’ and is one of the most vital aspects of the IKW25N120H3FKSA1 diode.

The IKW25N120H3FKSA1 diode is mainly used in power applications where very high currents and voltages need to be switched. It is commonly used in AC and DC motor speed regulation and control, lighting ballasts, UPS systems, and HVAC application. Aside from its typical usage, it can also be used to construct linear voltage regulators, switching regulators, as well as other power electronics applications.

The IKW25N120H3FKSA1 diode not only has an excellent on-off ratio but also features good noise immunity and low drive power requirements — thanks to its onboard gate-equivalent capacitance. Another notable feature of the IKW25N120H3FKSA1 diode is its superior short-circuit protection. This is because of its integrated self-protection circuit which can quickly correct current or voltage values before they become too high or too low.

The IKW25N120H3FKSA1 diode is a very useful and versatile component. It can be used in a wide range of applications and is able to provide reliable and efficient power switching. It is also a cost-effective solution for many applications due to its low drive power requirements and its excellent noise immunity. With its ability to efficiently handle high currents and voltages, this component proves to be an invaluable addition to any circuit.

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