IKW30N60TFKSA1 Discrete Semiconductor Products

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Insulated gate bipolar transistors (IGBTs) are a unique form of semiconductor field-effect transistors (FETs) featuring both high-voltage and low-voltage protection inside an insulated package. IGBTs, often referred to as single-gate FETs (SGBSs), are a versatile device utilized in a wide variety of electronic applications. IKW30N60TFKSA1 is a single, 2N-channel IGBT transistor made by Infineon, a global technology leader.

IKW30N60TFKSA1 is a popular choice for switching or amplification due to its superior performance and superior reliability. This transistor offers best-in-class power efficiency and outstanding power density. It is designed for soft switching applications and is ideal for applications such as motor control, power conversion and motor control, where the switching power loss is the primary concern. The device is available in a through-hole form featuring 6 leads, and its operating temperature range is extended to -40°C to +175°C.

What makes IKW30N60TFKSA1 unique is its bipolar architecture, which combines an insulated gate transistor (IGT) with a trench-gate bipolar transistor (TGBT). This hybrid device offers superior performance by utilizing the low-voltage protection of the IG FET and the high-voltage protection of the TGBT. It can switch both on and off quickly, with fast Turn-ON and Turn-OFF times as well as an extended temperate range. IKW30N60TFKSA1 is ideal for power control applications, especially for consumer applications such as motor control driving and uninterruptible power supply (UPS). It is also used in various industrial applications such as process control, medical equipment and LED lighting.

The working principle of IKW30N60TFKSA1 is similar to other FETs, in that when a voltage is applied across the gate and drain terminals, electrons are attracted towards the negatively charged gate terminal and are repelled away from the negative drain terminal. This results in a depletion region forming beneath the gate, which prevents current from flowing in the device. When a current is applied between the gate and drain terminals, the transistor switches on and current flows in the device.When a voltage is applied between the collector and emitter terminals, the transistor turns off. This is known as the reverse-biased state, and no current flows between these terminals. As the current is blocked from flowing in the device, the collector and emitter terminals become isolated from one another, creating a high-voltage barrier. This helps prevent arcing or shorting when high voltages are used in the circuit.Overall, IKW30N60TFKSA1 is an ideal device for power control applications due to its unique architecture and superior performance. It combines IGT and TGBT components to provide superior protection and versatility, while also providing a fast switching time and optimal power efficiency. It is a reliable and cost-effective solution for a variety of applications, from consumer applications to industrial ones.

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