IKW30N65H5XKSA1 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IKW30N65H5XKSA1 (30N65) is an insulated gate bipolar transistor (IGBT) module in a single-istor topology. It is widely used in various applications, particularly in motor control, HVAC systems and lighting control.

The 30N65 is a low-cost, smallest single-capacity IGBT that is designed for insulation coordination and power line communication. It is compact and offers the combination of low on-state losses and low switching losses, making it ideal for a range of applications. It is typically used in motor control, HVAC systems and lighting control, as well as switchmode converters.

The 30N65\'s structure and geometrical optimization ensures optimized temperature characteristics and switching performance. It also includes a high thermal strain resistance and adequate back-electromotive force resulting in a high power density and excellent thermal performance. It also offers improved EMC performance, which is beneficial in power control applications and provides higher system reliability.

The 30N65 is an insulated gate bipolar transistor (IGBT) module in a single-istor topology. It is based on the concept of a MOS fet and a bipolar junction transistor (BJT), with a single terminal connecting the two elements. As with all IGBTs, the 30N65 is designed to be operated as either an enhancement mode device, or a depletion mode device based on the bias applied between the appropriate terminals.

In the case of the 30N65, the source terminal is connected to the drain of the MOSFET and the drain terminal is connected to the collector of the BJT. Typically, the gate is connected to the source of the BJT, allowing for the conduction of current when the gate-source voltage (VGs) exceeds the junction threshold voltage of the MOSFET. The voltage between the power terminals (Vd) must be greater than the VBE of the BJT, otherwise there will be no current conduction through the device. As a result, the 30N65 is best operated under a constant voltage bias.

The 30N65 also includes a frequency-dependent current limitation to provide protection against potential overloads. The internal gate protection diodes provide a source of protection for the gate in case of overvoltage or negative voltage transients.

The 30N65 is ideal for a range of applications due to its low EMI/RFI and excellent temperature characteristics. It is suitable for use in motor control, HVAC systems, lighting control, and switchmode converters. It offers the combination of low on-state losses, low switching losses, high thermal strain resistance and adequate back-electromotive force to provide high power density and excellent thermal performance.

The specific data is subject to PDF, and the above content is for reference