IKW30N65NL5XKSA1 Discrete Semiconductor Products

Series:	TrenchStop™ 5
Packaging:	Tube
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
IGBT Type:	--
Voltage - Collector Emitter Breakdown (Max):	650V
Current - Collector (Ic) (Max):	85A
Current - Collector Pulsed (Icm):	120A
Vce(on) (Max) @ Vge, Ic:	1.35V @ 15V, 30A
Power - Max:	227W
Switching Energy:	560µJ (on), 1.35mJ (off)
Input Type:	Standard
Gate Charge:	168nC
Td (on/off) @ 25°C:	59ns/283ns
Test Condition:	400V, 30A, 23 Ohm, 15V
Reverse Recovery Time (trr):	59ns
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	PG-TO247-3

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IKW30N65NL5XKSA1 Application Field and Working Principle

The IKW30N65NL5XKSA1 device is an insulated gate bipolar transistor (IGBT) with a single-package type from Infineon Technologies. It is a robust and reliable IGBT with a low forward voltage and excellent switching performance, making it suitable for a range of applications.This IGBT combines the fast, high-power switching capabilities of a bipolar transistor with the low, voltage control of an insulated gate field effect transistor (MOSFET). This allows for power conversion, motor control, and other pulsed applications to be efficiently carried out using a single, compact package. Furthermore, its simple design helps reduce the overall complexity of the circuit, making it suitable for applications with limited energy and space requirements.The IKW30N65NL5XKSA1’s three-terminal construction includes a collector terminal (C), an emitter terminal (E), and a control terminal (G). It is an N-channel device, meaning the current flows when applying a negative voltage at the control terminal and a positive at the emitter.The device’s forward voltage drop is typically around 3.8V, while a typical on-state resistance is only 10mΩ. Its nominal power dissipation is 633W with a peak repetitive voltage of 650V. It also has a high current carrying capacity of 30A and fast switching performance, helping reduce losses and improve efficiency for applications with high pulsed currents.The IKW30N65NL5XKSA1’s design ensures that it has excellent thermal characteristics, ensuring reliable operation over a wide temperature range of -40°C to 125°C. It also has a robust package design which can withstand external mechanical shocks and thermal stresses, making it suitable for use in harsh environments.Overall, the IKW30N65NL5XKSA1 is a robust, reliable and efficient device, making it suitable for a range of applications, including power conversion, motor control and other pulsed applications. Its simple three-terminal construction and low forward voltage drop help reduce energy and space requirements, making it the ideal choice for applications with limited energy and space.

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