Allicdata Part #: | IKW40N120H3FKSA1-ND |
Manufacturer Part#: |
IKW40N120H3FKSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 1200V 80A 483W TO247-3 |
More Detail: | IGBT Trench Field Stop 1200V 80A 483W Through Hole... |
DataSheet: | IKW40N120H3FKSA1 Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | PG-TO247-3 |
Series: | TrenchStop® |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 80A |
Current - Collector Pulsed (Icm): | 160A |
Vce(on) (Max) @ Vge, Ic: | 2.4V @ 15V, 40A |
Power - Max: | 483W |
Switching Energy: | 4.4mJ |
Input Type: | Standard |
Gate Charge: | 185nC |
Td (on/off) @ 25°C: | 30ns/290ns |
Test Condition: | 600V, 40A, 12 Ohm, 15V |
Reverse Recovery Time (trr): | 355ns |
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?The IKW40N120H3FKSA1 – commonly referred to as an insulated gate bipolar transistor (IGBT) – is one of the most widely used transistors in existence today. The IKW40N120H3FKSA1 is a single-junction field effect transistor that is designed for applications requiring high efficiency control of load currents over a wide range of voltages. The IKW40N120H3FKSA1 is primarily used in the fields of consumer electronics, automotive, telecommunications, and industrial applications. In this article, we will explore the IKW40N120H3FKSA1’s application field and working principle, highlighting how this versatile transistor can be used in a variety of fields.
Within consumer electronics, the IKW40N120H3FKSA1 is commonly used in applications such as power supplies, computer monitors, digital cameras and televisions. The IKW40N120H3FKSA1 is ideal for these type of applications due to its high efficiency, low voltage operation and low cost. In addition, the IKW40N120H3FKSA1 is also used in a variety of automotive applications such as engine control, driver assistance systems, fuel cells and hybrid electric vehicles. In the telecommunications field, the IKW40N120H3FKSA1 is used for high speed data transfer, security systems and phone networks. Lastly, the IKW40N120H3FKSA1 finds application in the industrial field, such as motor control, inverter control and switching.
In terms of the IKW40N120H3FKSA1’s working principle, it functions by utilizing the voltage potential across a channel to control the current flow. This is determined by the polarity of the channel, meaning if the channel has a negative potential at one end and a positive potential at the other, current is allowed to flow. Additionally, the IKW40N120H3FKSA1 has the ability to control current with high efficiency and low thermal heat dissipation. This makes it ideal for applications that demand energy efficiency, such as those found in the telecom field.
In conclusion, the IKW40N120H3FKSA1 is an incredibly versatile transistor that finds uses in the fields of consumer electronics, electromobility, telecommunications, and industrial automation. As highlighted, the IKW40N120H3FKSA1 has a wide range of benefits and features, such as high efficiency, low voltage operation and low power dissipation. As such, this transistor is an excellent choice for any project that requires a reliable, cost-effective and high performance transistor.
The specific data is subject to PDF, and the above content is for reference
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