IKW40N120T2FKSA1 Allicdata Electronics

IKW40N120T2FKSA1 Discrete Semiconductor Products

Allicdata Part #:

IKW40N120T2FKSA1-ND

Manufacturer Part#:

IKW40N120T2FKSA1

Price: $ 5.90
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 1200V 75A 480W TO247-3
More Detail: IGBT Trench 1200V 75A 480W Through Hole PG-TO247-3
DataSheet: IKW40N120T2FKSA1 datasheetIKW40N120T2FKSA1 Datasheet/PDF
Quantity: 970
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: $ 5.36760
10 +: $ 4.84785
100 +: $ 4.01354
500 +: $ 3.49493
1000 +: $ 3.04396
Stock 970Can Ship Immediately
$ 5.9
Specifications
Series: TrenchStop®
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 75A
Current - Collector Pulsed (Icm): 160A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Power - Max: 480W
Switching Energy: 5.25mJ
Input Type: Standard
Gate Charge: 192nC
Td (on/off) @ 25°C: 33ns/314ns
Test Condition: 600V, 40A, 12 Ohm, 15V
Reverse Recovery Time (trr): 258ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3
Description

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An IKW40N120T2FKSA1 is a single insulated gate bipolar transistor (IGBT) that is commonly used in many applications from motor drives, welding, traction and uninterruptible power supply (UPS) systems to induction heating, lighting, solar invertersanand systems for renewable energy. This type of IGBT combines the features of a MOSFET and a BJT, translating it into a robust and powerful device with superior switching characteristics to its simple components.

The IKW40N120T2FKSA1 has a current rating of 40A and a voltage rating of 1200V with a very low forward voltage drop. This makes it an ideal choice for use in applications that require high current switching and very low forward voltage drop.

The IKW40N120T2FKSA1 is used in high power switching applications due to its excellent current capability and low noise performance. Its low power loss makes it a popular choice for power amplifiers, motor control and other applications such as electric welding.

The IKW40N120T2FKSA1 also offers high speed switching and high noise immunity, making it suitable for applications that require quick and reliable operations. Additionally, its low turn-on and turn-off characteristics result in less power dissipation, making it ideal for applications that require high power efficiency.

In terms of working principle, the IKW40N120T2FKSA1 has a simple functioning compared to other IGBTs. It has two terminals, a Collect terminal and a Gate terminal, which are connected to an exterior circuit board. When an electric current is applied to the Gate terminal, electrons are attracted and travel through the transistor from the Collector to the Emitter terminal. This movement in turn stimulates current flow from the Collector to the Emitter.

When the Gate terminal is no longer accepting current, the transistor is said to be \'off\'. This is because the current is no longer being stimulated and electrons are no longer traveling from the Collector to the Emitter. The IKW40N120T2FKSA1 is considered to be a “normally off” type of IGBT because its Gate terminal needs to be constantly energized in order to remain on. If the power to the Gate is cut off, the transistor will automatically turn itself off and current will not flow.

The specific data is subject to PDF, and the above content is for reference

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