IKW40N120T2FKSA1 Discrete Semiconductor Products |
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Allicdata Part #: | IKW40N120T2FKSA1-ND |
Manufacturer Part#: |
IKW40N120T2FKSA1 |
Price: | $ 5.90 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 1200V 75A 480W TO247-3 |
More Detail: | IGBT Trench 1200V 75A 480W Through Hole PG-TO247-3 |
DataSheet: | IKW40N120T2FKSA1 Datasheet/PDF |
Quantity: | 970 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | $ 5.36760 |
10 +: | $ 4.84785 |
100 +: | $ 4.01354 |
500 +: | $ 3.49493 |
1000 +: | $ 3.04396 |
Series: | TrenchStop® |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | Trench |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 75A |
Current - Collector Pulsed (Icm): | 160A |
Vce(on) (Max) @ Vge, Ic: | 2.2V @ 15V, 40A |
Power - Max: | 480W |
Switching Energy: | 5.25mJ |
Input Type: | Standard |
Gate Charge: | 192nC |
Td (on/off) @ 25°C: | 33ns/314ns |
Test Condition: | 600V, 40A, 12 Ohm, 15V |
Reverse Recovery Time (trr): | 258ns |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | PG-TO247-3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
An IKW40N120T2FKSA1 is a single insulated gate bipolar transistor (IGBT) that is commonly used in many applications from motor drives, welding, traction and uninterruptible power supply (UPS) systems to induction heating, lighting, solar invertersanand systems for renewable energy. This type of IGBT combines the features of a MOSFET and a BJT, translating it into a robust and powerful device with superior switching characteristics to its simple components.
The IKW40N120T2FKSA1 has a current rating of 40A and a voltage rating of 1200V with a very low forward voltage drop. This makes it an ideal choice for use in applications that require high current switching and very low forward voltage drop.
The IKW40N120T2FKSA1 is used in high power switching applications due to its excellent current capability and low noise performance. Its low power loss makes it a popular choice for power amplifiers, motor control and other applications such as electric welding.
The IKW40N120T2FKSA1 also offers high speed switching and high noise immunity, making it suitable for applications that require quick and reliable operations. Additionally, its low turn-on and turn-off characteristics result in less power dissipation, making it ideal for applications that require high power efficiency.
In terms of working principle, the IKW40N120T2FKSA1 has a simple functioning compared to other IGBTs. It has two terminals, a Collect terminal and a Gate terminal, which are connected to an exterior circuit board. When an electric current is applied to the Gate terminal, electrons are attracted and travel through the transistor from the Collector to the Emitter terminal. This movement in turn stimulates current flow from the Collector to the Emitter.
When the Gate terminal is no longer accepting current, the transistor is said to be \'off\'. This is because the current is no longer being stimulated and electrons are no longer traveling from the Collector to the Emitter. The IKW40N120T2FKSA1 is considered to be a “normally off” type of IGBT because its Gate terminal needs to be constantly energized in order to remain on. If the power to the Gate is cut off, the transistor will automatically turn itself off and current will not flow.
The specific data is subject to PDF, and the above content is for reference
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