IKZ75N65EH5XKSA1

The IKZ75N65EH5XKSA1 is an integrated gate bipolar transistor (IGBT) module which comes in a compact single-in-line package, making it suitable for applications where space is a concern. It has a maximum power dissipation of ~163 W and a maximum collector-emitter voltage of 75 V. It is a semiconductor switch with control elements and a power switching element (in this case an IGBT) integrated together in order to reduce the number of required components, provide higher efficiency and increase switching speed.

Application Field

Due to its small size, the IKZ75N65EH5XKSA1 module is used in highly compact electronic systems where space and current consumption are important criteria. With its integrated IGBT, the module is used in applications requiring switching and power conversion such as motor control, inverters, welders, uninterruptible power supplies and other high current, low voltage applications. The high efficiency of IGBT technology makes the IKZ75N65EH5XKSA1 ideal for applications requiring low power dissipation and improved heat transfer.

Working Principle

As its name suggests, the IKZ75N65EH5XKSA1 is an integrated gate bipolar transistor. This is a type of transistor commonly used for power switching applications. An IGBT is similar to a Power MOSFET, but is constructed from an N-channel MOSFET and a bipolar-junction transistor (BJT). This hybrid of a MOSFET and a BJT has several advantages such as lower power dissipation and switching losses, higher efficiency and higher switching speeds.

An IGBT transistor works in three modes: active, off and on or saturation. In the active mode, the gate voltage is between the cutoff and saturation thresholds, and both gate and collector currents flow. In the off mode, the gate voltage is greater than the cutoff voltage, and current flowing between the collector and emitter is cut off. In the saturation mode, the gate voltage is greater than the saturation threshold, and the emitter-collector current is at its maximum level.

When the IGBT transistor is connected in ptloss, it can act as a switch between two ports (e.g., load and power source). When the gate voltage is low, the switch is on, and current is allowed to flow from the power source to the load. When the gate voltage is increased, the switch is off and current can no longer flow. The IBT75N65EH5XKSA1 is designed for applications which require high power ratings, high switching speed and high efficiency, making it a useful and reliable transistor for a variety of applications.