IKZ75N65EL5XKSA1

The IKZ75N65EL5XKSA1 is a type of Insulated Gate Bipolar Transistor (IGBT) designed for high power applications and given the same rating as power MOSFETs. It is an IGBT module consisting of an IGBT cell, reverse body diode, gate resistors and clamp diodes, which are all housed within a moulded thermally improved package.

General Specifications

The IKZ75N65EL5XKSA1 is a fast IGBT module with great switching performance and low conduction losses. It has a voltage rating of 500V, current rating of 50A, on-state resistance of 8.7mΩ, and a turn-off time of 45ns. The package is a single-in-line (SIL) with five pins, the collector connects to the negative side, the emitter connects to the positive side and the gate to the control side.

Application Field and Working Principle

The IKZ75N65EL5XKSA1 is designed for high power applications such as air conditioning equipment and household appliances. The device can switch big currents in a very short time, reducing size and cost. Its fast switching speed makes it possible for high switching frequency applications such as uninterruptible power supplies (UPS) and motor drives.

The device has two distinct parts with two different working principles; the collector-emitter part is a normal transistor that switches current depending on the voltage applied at the gate, while the gate-emitter part is the reverse-body diode which blocks voltages of an opposite polarity.

Safety and Protection Features

The IKZ75N65EL5XKSA1 has several safety and protection features, such as an over-temperature shut-off to protect against thermal runaway, a reverse-voltage protection diode, EMI suppression and over-voltage protection.

Conclusion

The IKZ75N65EL5XKSA1 is an excellent choice for high power applications due to its fast switching speed and low conduction losses. Its safety and protection features make it a reliable device in these demanding applications.