IKZ75N65ES5XKSA1 Allicdata Electronics
Allicdata Part #:

IKZ75N65ES5XKSA1-ND

Manufacturer Part#:

IKZ75N65ES5XKSA1

Price: $ 5.34
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT TRENCH 650V 80A TO247-4
More Detail: IGBT Trench 650V 80A 395W Through Hole PG-TO247-4
DataSheet: IKZ75N65ES5XKSA1 datasheetIKZ75N65ES5XKSA1 Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 4.85730
10 +: $ 4.38732
100 +: $ 3.63239
500 +: $ 3.16303
1000 +: $ 2.75489
Stock 1000Can Ship Immediately
$ 5.34
Specifications
Switching Energy: 1.3mJ (on), 1.5mJ (off)
Supplier Device Package: PG-TO247-4
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 72ns
Test Condition: 400V, 15A, 22.3 Ohm, 15V
Td (on/off) @ 25°C: 46ns/405ns
Gate Charge: 164nC
Input Type: Standard
Series: TrenchStop™ 5
Power - Max: 395W
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 75A
Current - Collector Pulsed (Icm): 300A
Current - Collector (Ic) (Max): 80A
Voltage - Collector Emitter Breakdown (Max): 650V
IGBT Type: Trench
Lead Free Status / RoHS Status: --
Part Status: Active
Description

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The IKZ75N65ES5XKSA1 is an IGBT transistor, also known as an insulated gate bipolar transistor, which is a type of switch-mode power transistor. It is designed for high-current, high-voltage applications, and has been designed for use in automobiles, industrial equipment, and consumer electronics. The main purpose of this transistor is to control the flow of current through a circuit. This can be used for controlling motor speed, or regulating the voltage or current in a circuit.

The IKZ75N65ES5XKSA1 is a single, monolithic switching device, meaning it is made from a single, continuous piece of material. The main components of this device are the base, the collector, and the emitter. The base is used to control the electrical signals which are then sent to the collector and emitter. The collector then takes the signals and amplifies them, which causes the current to flow across the emitter.

The IKZ75N65ES5XKSA1 has a total of five electrical terminals. These include the emitter, the collector, the base, and two terminals used to provide external voltage regulation. The emitter and the collector are used to supply current and voltage to the external circuit, while the base is used as the control terminal. The two external voltage regulation terminals are used to provide the necessary biasing voltage for the current and voltage control.

The switching mechanism used in the IKZ75N65ES5XKSA1 is called a gate-controlled switch. This makes use of the charge stored on the gate, which then affects the current in the circuit by changing the voltage. When a voltage is applied to the gate terminal, the charge is either absorbed or released, depending on the magnitude of the applied voltage. This changes the current, which results in a change in the voltage across the transistor.

This type of transistor is used in a variety of industrial and consumer applications, such as power converters, motor drives, and other power control applications. It is also used in a variety of circuit protection applications, such as voltage limiters, overvoltage, and overcurrent protection.

The IKZ75N65ES5XKSA1 is an excellent choice for high-current, high-voltage applications, due to its low on-state voltage drop and high input impedance. Its compact size makes it ideal for use in small, space-restricted designs. It is also a cost-effective choice for controlling power in automotive, industrial, and consumer electronics designs.

The specific data is subject to PDF, and the above content is for reference

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