IMB11AT110 Allicdata Electronics
Allicdata Part #:

IMB11AT110TR-ND

Manufacturer Part#:

IMB11AT110

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PREBIAS DUAL PNP SMT6
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi...
DataSheet: IMB11AT110 datasheetIMB11AT110 Datasheet/PDF
Quantity: 3000
3000 +: $ 0.05424
6000 +: $ 0.04882
15000 +: $ 0.04339
30000 +: $ 0.04069
75000 +: $ 0.03616
Stock 3000Can Ship Immediately
$ 0.06
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Base Part Number: MB11
Supplier Device Package: SMT6
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Power - Max: 300mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Series: --
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 PNP - Pre-Biased (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IMB11AT110 is an advanced, integrated, pre-biased transistor array developed by International Rectifier Company. This device is composed of an array of 4 advanced, NPN and PNP transistors, each containing monolithic co-packaged voltage regulators. Each of the transistors is pre-biased to a nominal regulated voltage, allowing them to operate at a high efficiency level with minimal power consumption. The IMB11AT110 can generate up to 150mA of current per transistor.

This device is suitable for a wide range of applications where efficient power conversion, low power consumption and reliability are critical. Common applications include power supply designs, voltage regulators, switching and driving loads, a variety of logic systems, amplifiers and other signal processing circuits.

The IMB11AT110\'s primary functions are twofold: to accurately bias each of its four transistors, and to provide a wide range of operating current levels. It contains four pre-biased output stages, each operating at a regulated voltage of 3.8V. The device\'s operating current is adjustable via external resistors. The total output current at full-rating will depend on the bias current set by the resistors. XR1160 is the specific IC that controls this bias current.

The IMB11AT110 offers a high performance solution to the various power-conversion needs of demanding applications. It is composed of high-speed PNP and NPN transistors and high-efficiency switched-resistor networks, providing temperature stability and low power dissipation for operating in severe environmental conditions. The package size is equivalent to a DIP-8, allowing for an efficient design and cost-effective solution.

The IMB11AT110 can be used in a variety of applications, from low power off-line converters to high-performance switching applications. Its multiple current output stages allow it to efficiently support heavy-duty loads while maintaining a steady operating temperature. Its high-current density also makes it ideal for creating highly efficient designs. In addition, the device offers a wide operating temperature range and full protection against over-voltage and breakdown.

To conclude, IMB11AT110 is an advanced, integrated, pre-biased transistor array developed by International Rectifier Company. This device is ideal for low power off-line converters, high-performance switching applications, and many other applications where efficient power conversion, low power consumption, and reliability are critical. The IMB11AT110 provides an efficient and cost effective solution, combining high-speed transistors, high-efficiency switched components, and multiple current output stages for a reliable solution. It is available in a DIP-8 form factor and is fully protected against over-voltage and breakdown.

The specific data is subject to PDF, and the above content is for reference

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