IMB2AT110 Discrete Semiconductor Products |
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Allicdata Part #: | IMB2AT110TR-ND |
Manufacturer Part#: |
IMB2AT110 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS DUAL PNP SMT6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | IMB2AT110 Datasheet/PDF |
Quantity: | 1000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 68 @ 5mA, 5V |
Base Part Number: | MB2 |
Supplier Device Package: | SMT6 |
Package / Case: | SC-74, SOT-457 |
Mounting Type: | Surface Mount |
Power - Max: | 300mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 47 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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Transistors are widely used in a variety of applications across many industries, as they provide an efficient means of controlling and amplifying electrical signals. The IMB2AT110 is a pre-biased array that combines the functionality of two transistors into a single package, offering excellent performance in both digital and analog designs. In this article, we will discuss the application field and working principle of the IMB2AT110.
Application Field of IMB2AT110
The IMB2AT110 has a wide range of applications in both digital and analog designs. Thanks to its dual transistors, the device is well-suited for a variety of signal conversion and power switching applications, including motor and LED control, signal switching and amplification, H-bridge and motor driver control, current sensing, and signal conditioning. In addition, the device can be used in low side negative voltage switching. The IMB2AT110 is also ideal for adding a level of protection to electronic circuits and microprocessors, as its pre-biased array offers robust ESD protection.
Working Principle of IMB2AT110
The IMB2AT110 is an NPN transistors array with two integrated transistors in a single package, designed to offer excellent performance in both digital and analog applications. The device pre-biasing arrangement allows the transistors to operate efficiently at a wide range of power levels. This is made possible by the pre-bias circuitry which keeps the current flowing through the transistors balanced. This ensures stable operation of the transistors and leads to better performance. The device works by using the pre-biased arrangement to drive one of the transistors on and off, while keeping the other transistor in a fixed, steady state. This allows the device to be used for both digital and analog applications as it ensures that the current flow is kept balanced and stable at all times.
Conclusion
The IMB2AT110 is an excellent transistor array for both digital and analog applications. Its pre-bias arrangement offers excellent ESD protection, as well as stable performance in a range of applications. The device is a great choice for power switching, motor and LED control, signal conditioning and low side negative voltage switching. With its simple two-transistor structure, the IMB2AT110 is sure to be a great addition to any design requiring excellent performance in either digital or analog applications.
The specific data is subject to PDF, and the above content is for reference
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