IMB2AT110 Allicdata Electronics

IMB2AT110 Discrete Semiconductor Products

Allicdata Part #:

IMB2AT110TR-ND

Manufacturer Part#:

IMB2AT110

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PREBIAS DUAL PNP SMT6
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi...
DataSheet: IMB2AT110 datasheetIMB2AT110 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Base Part Number: MB2
Supplier Device Package: SMT6
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Power - Max: 300mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Series: --
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 PNP - Pre-Biased (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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Transistors are widely used in a variety of applications across many industries, as they provide an efficient means of controlling and amplifying electrical signals. The IMB2AT110 is a pre-biased array that combines the functionality of two transistors into a single package, offering excellent performance in both digital and analog designs. In this article, we will discuss the application field and working principle of the IMB2AT110.

Application Field of IMB2AT110

The IMB2AT110 has a wide range of applications in both digital and analog designs. Thanks to its dual transistors, the device is well-suited for a variety of signal conversion and power switching applications, including motor and LED control, signal switching and amplification, H-bridge and motor driver control, current sensing, and signal conditioning. In addition, the device can be used in low side negative voltage switching. The IMB2AT110 is also ideal for adding a level of protection to electronic circuits and microprocessors, as its pre-biased array offers robust ESD protection.

Working Principle of IMB2AT110

The IMB2AT110 is an NPN transistors array with two integrated transistors in a single package, designed to offer excellent performance in both digital and analog applications. The device pre-biasing arrangement allows the transistors to operate efficiently at a wide range of power levels. This is made possible by the pre-bias circuitry which keeps the current flowing through the transistors balanced. This ensures stable operation of the transistors and leads to better performance. The device works by using the pre-biased arrangement to drive one of the transistors on and off, while keeping the other transistor in a fixed, steady state. This allows the device to be used for both digital and analog applications as it ensures that the current flow is kept balanced and stable at all times.

Conclusion

The IMB2AT110 is an excellent transistor array for both digital and analog applications. Its pre-bias arrangement offers excellent ESD protection, as well as stable performance in a range of applications. The device is a great choice for power switching, motor and LED control, signal conditioning and low side negative voltage switching. With its simple two-transistor structure, the IMB2AT110 is sure to be a great addition to any design requiring excellent performance in either digital or analog applications.

The specific data is subject to PDF, and the above content is for reference

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