IMB4AT110

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The IMB4AT110 is a wideband amplifier optimized for both linear and medium power applications using common-emitter bipolar transistor arrays. It is typically used in high frequency transceiver systems, marine and airborne telemetry, logarithmic amplifiers, pulse amplifiers, VCOs, microwave amplifiers, and medical/healing applications. The IMB4AT110 is especially useful in military and other harsh environments where reliable operation and high linearity is required.

The IMB4AT110 is a high power amplifier featuring a transistor array, pre-biased common emitter topology. This configuration allows for wideband operation with very low distortion. The device is capable of delivering up to 1.2 Watts of output power and can handle frequency ranges from 10 MHz to 1000 MHz.

The IMB4AT110 consists of six NPN transistors. The individual transistors are arranged in two packages and connected in a parallel fashion by means of a common emitter configuration. This allows for a high current, low voltage bias, and a wide bandwidth while achieving very high gain and low distortion.

The device has an adjustable collector current of up to 1.2 A and an adjustable voltage gain of up to 10. The gain is set with an external potentiometer. The maximum voltage is limited to 500 mV and the maximum collector current is set to 400 mA.

The IMB4AT110 also features an input protection circuit and is designed to be used with RF signals. It is designed to operate from a single-supply, making it ideal for applications where power efficiency is critical.

The working principle of the IMB4AT110 is based on the common-emitter bipolar transistor array. Each of the six transistors in the device are arranged in a parallel configuration and the bias to the transistors is supplied by the voltage drop of the protection circuit. The transistors are carefully matched in order to ensure consistent performance across the entire bandwidth.

The IMB4AT110 has a high output power of up to 1.2 Watts and is designed to operate in environments with high temperatures, humidity and/or strong vibration. It also features an adjustable collector current and voltage gain, allowing for control over the output performance and power consumption.

In summary, the IMB4AT110 is a high power amplifier designed to provide steady performance in harsh environments. The device features a pre-biased common emitter topology and utilizes six NPN transistors arranged in a parallel fashion. It is designed to operate from a single supply, allowing for an adjustable voltage gain, collector current and input protection circuit. Overall, the IMB4AT110 is an ideal amplifier for applications requiring high power and linear operation.

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