
Allicdata Part #: | IMD3AT108TR-ND |
Manufacturer Part#: |
IMD3AT108 |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS NPN/PNP PREBIAS 0.3W SMT6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.07000 |
10 +: | $ 0.06790 |
100 +: | $ 0.06650 |
1000 +: | $ 0.06510 |
10000 +: | $ 0.06300 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 5mA, 5V |
Base Part Number: | *MD3 |
Supplier Device Package: | SMT6 |
Package / Case: | SC-74, SOT-457 |
Mounting Type: | Surface Mount |
Power - Max: | 300mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 10 kOhms |
Resistor - Base (R1): | 10 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The IMD3AT108 is a Pre-Biased Bipolar Junction Transistor (BJT) Array. It is an advanced semiconductor product developed by International Microelectronic Devices, from a power level of 10 volts to a high current of 20 Amps at various junction temperatures. The device also combines low on-resistance and low current leakage for energy efficiency and high switching speed for enhanced performance.The main advantages of the IMD3AT108 are its numerous application fields in addition to its low operating voltage and high current carrying capacity. Specifically, it can be used in a variety of power applications including, but not limited to, industrial motor control and other applications where high speed switching is required. Additionally, its extremely low saturation voltage at junction temperatures makes it ideal for variety of data processing high-speed applications such as power supply circuits.The IMD3AT108 uses 6pins in order to facilitate easy connection to other components in the circuit. The 6 pins provide better stability, reduce EMI noise, provide increased on-state current, and reduce the overall power consumption.From a technical perspective, the IMD3AT108 is designed to work with the latest in IGBT technology. It contains two primary components, a high-speed switching element and a low-voltage power source device. This ensures that high-speed operations can be achieved. At the same time, it provides higher current and less power dissipation, thereby, eliminating the need for a separate heat sink or other external devices.The working principle of the IMD3AT108 is simple. It works by controlling an applied voltage and current, and consequently, the output current is maintained at a constant level, determined by the voltage and current of the IGBT. When the voltage across the device\'s base is changed, the current output of the device is consequently changed. The current output is adjusted by the resistor between the base and the output, which can then be used to regulate the output current.The IMD3AT108 is a great solution for applications that require high switching speed, efficient power management and a wide range of operating voltages. The device is known to be extremely reliable, and is ideal for a range of applications. It is designed for efficient performance and utilizes advanced technologies for safe and reliable operation.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
IMD3AT108 | ROHM Semicon... | -- | 1000 | TRANS NPN/PNP PREBIAS 0.3... |
TRANS NPN PREBIAS/NPN 6TSSOPPre-Biased B...

TRANS RET SC-88Pre-Biased Bipolar Transi...

TRANS RET SC-88Pre-Biased Bipolar Transi...

TRANS RET SC-88Pre-Biased Bipolar Transi...

TRANS RET SC-88Pre-Biased Bipolar Transi...

TRANS RET SC-88Pre-Biased Bipolar Transi...
