IMH23T110

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IMH23T110 Application Field and Working Principle

The IMH23T110 is a three-high pre-biased Transistor Array with two complementary NPN transistors and one complementary PNP transistor assembled in a doubly-balanced four-terminal configuration. This makes it suitable for use in power switching applications that require high-speed response, such as power MOSFET/IGBT drive circuits. As well as providing flexibility in circuit configuration, it also has strong protection features such as over-voltage and over-temperature protection capabilities.

Working Principle

The IMH23T110 works on the principle of the bipolar junction transistor (BJT). This is a three terminal device composed of two P-type layers sandwiching an N-type layer. When a base voltage is applied to one of the outer layers, it creates a hole-electron pair in the N-type layer, resulting in a controlled current flow from the Collector to the Emitter. In addition to the BJT, the IMH23T110 also includes a complementary PNP transistor in the same package. This combination of BJT and PNP transistors makes it possible to control the power switch and output voltage with the same control signal.The IMH23T110 is designed with a pre-biased configuration. This means that the biasing resistors and the necessary circuits for BJT switching are built into the package. This not only saves space but also reduces the complexity of the circuit design.

Application Field

The IMH23T110 is particularly suitable for use in automotive electronics and industrial applications, such as the control of motors and the switching of power amplifiers. It is also increasingly being used in the control of motors in machines, such as the door locks for elevators and escalators.The IMH23T110 offers a low on-state resistance (Rds) of 1.2 ohms. This makes it efficient when used in selectivity and logic circuits and the gate drive circuits, which are typically used in switching applications.The IMH23T110 also offers high isolation, with a breakdown voltage of 600V. This means it is suitable for use in high-voltage applications, such as the control of switching power sources and the control of IGBT devices, without the need for additional protection (e.g. TVS or reverse polarity protection).

Conclusion

The IMH23T110 is a three-high pre-biased Transistor Array that combines two NPN transistors and one PNP transistor. It has a wide range of applications, from controlling motors to power amplifiers and IGBTs. It also offers superior performance, with a low on-state resistance and a breakdown voltage of 600V. This makes it an ideal solution for a variety of power switching applications.

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