IMH3AT110 Allicdata Electronics
Allicdata Part #:

IMH3AT110TR-ND

Manufacturer Part#:

IMH3AT110

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PREBIAS DUAL NPN SMT6
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: IMH3AT110 datasheetIMH3AT110 Datasheet/PDF
Quantity: 3000
Stock 3000Can Ship Immediately
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Base Part Number: *MH3
Supplier Device Package: SMT6
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Power - Max: 300mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Series: --
Resistor - Emitter Base (R2): --
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 NPN - Pre-Biased (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IMH3AT110 Application Field and Working Principle

The IMH3AT110 is a pre-biased, grown-junction shallow-trench isolation (STI) bipolar transistor array integrated circuit (IC), specifically developed to control late stage power in audio amplifiers and other similar power management applications. This device is primarily intended for use in automotive, consumer electronics and battery powered portable audio applications.

Features

  • Low Operating Current (3.3mA)
  • Low Standby Current (1μA)
  • Minimum On-Resistance (7.2 Ohm)
  • High Immune To Short Circuit Conditions
  • High ESD Performance

Application Field

The IMH3AT110 is designed for use in audio amplifier and power management applications, typically operating within the range of 9V~20V. Such applications, due to their varied nature, present different challenges to the system designer, requiring features that can withstand high peak currents and a wide range of system voltages. The IMH3AT110 has been developed to provide a single, easy to use and cost effective solution that can be tailored to meet the challenging requirements of these applications.

Package

The IMH3AT110 is offered in the SMD SOIC-16L (D-IPAS) package, which is a low cost, lead-free, surface mountable solution. It has a maximum dimension of 7.5 mm x 11.7 mm and offers excellent thermal dissipation, enabling use in power management applications.

Working Principle

The IMH3AT110 is a pre-biased, grown-junction shallow-trench isolation (STI) bipolar transistor array integrated circuit (IC). It is designed to control late stage power in audio amplifiers and other similar power management applications. It consists of an array of six N-channel MOSFETS connected in parallel, with each MOSFET switching current in the same direction.

The IC is powered by a pre-set voltage applied across its drains, with the voltage set to match the application’s requirement. This pre-set voltage allows the user to control the amount of current passing through the IC, enabling it to operate within safe voltages and current limits.

The array of MOSFETs can either be activated in an independent or a common mode. In an independent mode, each MOSFET is activated by its own control signal. This enables the user to control the amount of current passing through each individual MOSFET, enabling the user to customize the current flow to the exact requirements of the application. In a common mode setup, a single control signal is used to activate the entire array, thereby allowing the user to control the amount of current passing through the entire array.

The bipolar transistor array comprises of six N-channel MOSFETs, each with its own gate terminal. A differential amplifier is used to amplify the input current, while the output stage consists of a pair of complementary MOSFETs. The amplifier stages combine to form a low noise, high speed differential circuit, which is then filtered and amplified to provide the desired amount of current for the target application.

The IMH3AT110 is designed for use in a wide range of audio amplifiers, power management applications, and automotive, consumer electronics and battery powered portable audio. Due its versatility, low operating and standby current, minimum on-resistance and high ESD performance, this IC offers a cost effective solution for power management applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "IMH3" Included word is 1
Part Number Manufacturer Price Quantity Description
IMH3AT110 ROHM Semicon... -- 3000 TRANS PREBIAS DUAL NPN SM...
Latest Products
PUML1,115

TRANS NPN PREBIAS/NPN 6TSSOPPre-Biased B...

PUML1,115 Allicdata Electronics
PUMH2/DG/B3,115

TRANS RET SC-88Pre-Biased Bipolar Transi...

PUMH2/DG/B3,115 Allicdata Electronics
PUMH1/DG/B3,115

TRANS RET SC-88Pre-Biased Bipolar Transi...

PUMH1/DG/B3,115 Allicdata Electronics
PUMD2/DG/B3,135

TRANS RET SC-88Pre-Biased Bipolar Transi...

PUMD2/DG/B3,135 Allicdata Electronics
PUMD2/DG/B3,115

TRANS RET SC-88Pre-Biased Bipolar Transi...

PUMD2/DG/B3,115 Allicdata Electronics
PUMD16/ZLX

TRANS RET SC-88Pre-Biased Bipolar Transi...

PUMD16/ZLX Allicdata Electronics