IMH6AT108 Allicdata Electronics
Allicdata Part #:

IMH6AT108TR-ND

Manufacturer Part#:

IMH6AT108

Price: $ 0.11
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PREBIAS DUAL NPN SMT6
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: IMH6AT108 datasheetIMH6AT108 Datasheet/PDF
Quantity: 1000
1 +: $ 0.11000
10 +: $ 0.10670
100 +: $ 0.10450
1000 +: $ 0.10230
10000 +: $ 0.09900
Stock 1000Can Ship Immediately
$ 0.11
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Base Part Number: *MH6
Supplier Device Package: SMT6
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Power - Max: 300mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Series: --
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 NPN - Pre-Biased (Dual)
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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IMH6AT108 Application field and working principle

IMH6AT108 is a pre-biased array of NPN bipolar junction transistors (BJT). It is designed to address the needs of applications requiring reliable and accurate switching of high current. It has wide range of application fields and various working principles.

Applications for IMH6AT108 includes: level shifting, motor control, AC/DC chassis protection, inrush current limiters, low-power switching, current loop circuits, solid-state loads and current limiter/driver circuits. The device has two PNP transistors in the same package and can be used as a Solid-State switch or as a power source. It can also be used to control a wide variety of loads, including motors, resistive/capacitive, and inductive loads. It can be also used in combination with other devices or circuits to improve performance.

The working principle of IMH6AT108 is based on bipolar junction transistors. A PNP transistor provides current gain when it is connected to the battery. A NPN transistor acts as the switch by regulating the current flow by a controlled amount. When there is no current flow, the transistors are inactive. When the control signal is applied, the transistors turn on and the current flows through the transistor pair.

The main feature of this device is its ability to operate at high current. Its maximum peak output current is up to 6 A, which is enough to support many applications. The device also has high frequency performance, which means it can switch high currents in fast rates.

The device also has high isolation capability between its output and the controlling signal. This increases the device’s reliability. Other features include its wide voltage range, ESD protection and wide temperature range.

In conclusion, IMH6AT108 is a pre-biased array of NPN bipolar junction transistors (BJT). It can be used in various applications requiring reliable and accurate switching of high current. Its main feature is its ability to operate at high current, which makes it a suitable choice for many applications. Other features include its wide voltage range, ESD protection and wide temperature range.

The specific data is subject to PDF, and the above content is for reference

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