IMH8AT108

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The IMH8AT108 is a high-speed, pre-biased bipolar transistors array that offers superior switching performance and current handling characteristics for high-performance applications. The IMH8AT108 is designed for use in a variety of circuits, including digital systems, high-frequency amplifier, and other demanding applications. The IMH8AT108 offers high-speed switching characteristics, excellent linearity and performance, and low power dissipation. It is also designed to operate with a wide range of operating voltages and temperatures.

The IMH8AT108 array consists of four transistors with two emitter-base regions, and two collector-base regions. Each device includes two complementary bipolar transistors and a 16-bit latch that allows the input signal to travel through it in either direction. The device\'s transistors allow for low-on impedance and high EMF rejection, while providing excellent off-resistance and low on-resistance. This array also provides excellent linearity, with high-speed switching capabilities and low-power dissipation.

The IMH8AT108 has a wide range of operating voltage ranging from 1.2V to 10V. The device also operates over a wide range of temperatures from -40°C to +85°C and has a maximum power dissipation rating of up to 250mW. The device is designed to operate with a nominal static VBE of 0.40V to 0.74V and minimal leakage current of 10uA. In addition, the device has a low input bias current of 0.4uA and low input capacitance of 5pF.

The IMH8AT108 is ideal for use in applications such as digital switching, high-performance linear circuits, and other high-frequency applications. It has excellent linearity characteristics and its low-on resistance makes it ideal for low-voltage applications. The device\'s low power dissipation and low input current make it suitable for high-performance applications with lower power requirements.

The IMH8AT108\'s switching performance is excellent and its wide range of operating temperature and voltage make it suitable for use in a variety of environments. Its low-on impedance and high EMF rejection make it ideal for digital applications. The device is also designed for high-frequency amplifier applications, and has excellent linearity and low power dissipation. The device has a maximum power dissipation rating of up to 250mW and its low input bias current make it suitable for high-performance applications.

In summary, the IMH8AT108 is a high-speed, pre-biased bipolar transistors array that is designed for use in a variety of circuits, including digital systems, high-frequency amplifier, and other demanding applications. It offers excellent linearity, high speed switching characteristics, and low power dissipation. It is suitable for use in a wide range of applications, including digital switching, high-performance linear circuits, and other high-frequency applications. The device\'s low-on impedance, high EMF rejection, and low input bias current capabilities make it ideal for high-performance applications.

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