Allicdata Part #: | IMH9AT110TR-ND |
Manufacturer Part#: |
IMH9AT110 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS DUAL NPN SMT6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | IMH9AT110 Datasheet/PDF |
Quantity: | 6000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 68 @ 5mA, 5V |
Base Part Number: | *MH9 |
Supplier Device Package: | SMT6 |
Package / Case: | SC-74, SOT-457 |
Mounting Type: | Surface Mount |
Power - Max: | 300mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 10 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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An IMH9AT110 is a pre-biased array of bipolar transistors, which are widely used in a number of applications. The transistor array is designed to provide plenty of gain, making it ideal for a variety of output stages, amplifiers, and power control circuits. }
Understanding the Technology
The IMH9AT110 is an array of three independent bidirectional transistors that are designed as a single structure. The three transistors\' inter-base links can be adjusted in order to provide an effective gains of 2, 4, 6, 8, 16, and 30 respectively. The base-emitter voltage of the array is 2V across all of the three transistors, which makes the array self biasing.
As the three transistors share the same base-emitter voltage, it means that the base current of the three transistors is highly dependent on each other. This is beneficial in some circuits, as it reduces the amount of power needed to bias the transistors.
Application Area of IMH9AT110
The IMH9AT110 is widely used in a number of applications, such as power control circuits, stages amplifiers and even light dimmers. It is because the high gain allows for a high input impedance and the gain of the transistor can be adjusted to optimize it for different applications.
This type of transistor array is also used in some consumer applications, such as electric vehicles, power inverters, and electric motors. As the array provides a high gain and the base-emitter voltage the array is suitable for use in power control applications.
Working Principle of IMH9AT110
The IMH9AT110 uses three inter-linked transistors in an array with a common base-emitter voltage. This voltage is applied across the emitters and bases of all the transistors in the array. The base current of the three transistors is dependent on each other. The effective gain of the transistor array can be adjusted depending on the degree of inter-base link voltage. This allows the degree of gain to be adjusted in order to optimize it for different applications.
The inter-base link voltage is then adjusted using a voltage divider mechanism. This is done by connecting the common base-emitter voltage to the inter-base links and then adjusting the resistance between the links to achieve the desired gain. This arrangement allows the IMH9AT110 to have a high input impedance, which makes it suitable for power control applications.
Conclusion
The IMH9AT110 is a pre-biased array of bipolar transistors. It is used in a variety of applications, such as power control circuits, amplifiers stages and light dimmers. The transistor array is highly versatile, as the base current of the three transistors is dependent on each other, which allows for effective gains of 2, 4, 6, 8, 16, and 30, respectively. The IMH9AT110 also has a high input impedance, making it suitable for power control applications.
The specific data is subject to PDF, and the above content is for reference
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