Allicdata Part #: | IMX8-FDITR-ND |
Manufacturer Part#: |
IMX8-7-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS 2NPN 120V 0.05A SOT26 |
More Detail: | Bipolar (BJT) Transistor Array 2 NPN (Dual) 120V 5... |
DataSheet: | IMX8-7-F Datasheet/PDF |
Quantity: | 3000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 NPN (Dual) |
Current - Collector (Ic) (Max): | 50mA |
Voltage - Collector Emitter Breakdown (Max): | 120V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 180 @ 2mA, 6V |
Power - Max: | 300mW |
Frequency - Transition: | 140MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-23-6 |
Supplier Device Package: | SOT-26 |
Base Part Number: | IMX8 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
IMX8-7-F is a lateral double diffused metal oxide semiconductor (LDMOS) transistor used for radio-frequency (RF) power applications. It is part of an RF transistor array consisting of seven LDMOS transistors (IMX8-7-F, IMX2-5-F, IMX5-5-F, IMX7-5-F, IMX8-5-F, IMX9-5-F, IMX9-1-F). The IMX8-7-F is a micro component that combines LDMOS technology with very low on-state resistance and high breakdown voltage. It offers high efficiency and low power consumption in an ultra-small package.
An RF transistor array typically uses the same transistor type with different sizes of channels to create a wide range of power outputs. The array is designed to optimize matching and efficiency in a wide range of applications and operating frequencies. The seven RF transistors in the IMX8-7-F array are manufactured in different sizes to provide density, power, and efficiency to a wide range of applications.
The transistors in the array are organized into three groups of two transistors each. Each group consists of two transistors connected in series. This allows the transistors in each group to be biased to different voltages, allowing the array to provide better efficiency and power optimization. The seven transistors in the array are connected in parallel, providing a high level of common-mode thermal resistance and a low level of parasitic reactance.
The working principle of the IMX8-7-F revolves around an electrical conduction in a semiconductor. The electrical conduction is made possible by the movement of electrons, due to a potential difference across the transistor structure. When the gate voltage of the transistor is increased, the electrons move through the transistor and carry the current across the transistor. This current carries the signal from the base to the collector of the transistor, allowing the signal to be sent from the antenna. The RF transistors in the array are designed with a low on-state resistance and high breakdown voltage, allowing the transistors to operate at higher power levels, while still maintaining high efficiency.
The IMX8-7-F array is used in a variety of applications, with the main application being in radio-frequency and microwave systems. The array is ideal for modulators, power amplifiers, and switching applications and is widely used in cellular base stations, satellite communications systems, and wireless backhaul networks. The array is also used in military communication systems and radar applications. It is also used in automotive, industrial, and medical fabrics.
Overall, the IMX8-7-F array is a compact, efficient, and reliable device for radio-frequency and microwave applications. It takes advantage of LDMOS technology to provide high efficiency and low power consumption in an ultra-small package. The array is capable of providing a high level of output power and low operating temperature, making it a versatile and reliable choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
TRANS NPN/PNP 45V 0.1A 6DFNBipolar (BJT)...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
IC INTEGRATED CIRCUITBipolar (BJT) Trans...