INN2023K

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1. Description

The InnoSwitch™-CH family of ICs dramatically simplifies the development and manufacturing of low-voltage, high current power supplies, particularly those in compact enclosures or with high efficiency requirements. The InnoSwitch-CH architecture is revolutionary in that the devices incorporate both primary and secondary controllers, with sense elements and a safety-rated feedback mechanism into a single IC. Close component proximity and innovative use of the integrated communication link permit accurate control of a secondary-side synchronous rectification MOSFET and optimization of primary-side switching to maintain high efficiency across the entire load range. Additionally, the minimal DC bias requirements of the link enables the system to achieve less than 10 mW no-load in challenging applications such as smart-mobile device chargers.

2. Highly Integrated, Compact Footprint 

    1. Incorporates flyback controller, 650 V MOSFET, secondary-side sensing and synchronous rectification driver

    2. Integrated FluxLink™, HIPOT-isolated, feedback link

    3. Exceptional CV/CC accuracy, independent of transformer design or external components

    4. Instantaneous transient response ±5% CV with 0%-100%-0% load step

3. EcoSmart™ – Energy Efficient

    1. <10 mW no-load at 230 VAC when supplied by transformer bias winding

    2. Easily meets all global energy efficiency regulations

    3. Low heat dissipation

4. Advanced Protection / Safety Features

    1. Primary sensed output OVP

    2. Secondary sensed output overshoot clamp

    3. Secondary sensed output OCP to zero output voltage

    4. Hysteretic thermal shutdown

5. Full Safety and Regulatory Compliance

    1. 100% production HIPOT compliance testing equivalent to 6 kV DC/1 sec

    2. Reinforced insulation

    3. Isolation voltage >3,500 VAC

    4. UL1577 and TUV (EN60950) safety approved

    5. EN61000-4-8 (100 A/m) and EN61000-4-9 (1000 A/m) compliant

6. Green Package

    1. Halogen free and RoHS compliant

7. Applications

    1. Chargers and adapters for smart mobile devices

    2. High efficiency, low voltage, high current power supplies

8. Pin configuration

9. Function Description

InnoSwitch-CH combines high-voltage power MOSFET switches Primary side and secondary side controllers in one device. Feedback scheme using proprietary FluxLink coupling scheme Use package lead frames and bonding wires to provide reliable Low cost method to provide accurate output direct sensing The voltage and output current on the secondary communicate Information to the main IC. Different from traditional PWM (pulse width Modulation) controller, which uses simple on/off control to adjust Output voltage and current. The main controller consists of a Oscillator, magnetically coupled to the secondary receiver circuit Controller, current-limiting state machine, 5.95 V regulator PRIMARY BYPASS pin, overvoltage circuit, current limit selection Circuit, overheating protection, leading edge blanking and 650 V power MOSFET. InnoSwitch-CH auxiliary controller Composed of magnetically coupled to transmitter circuit Primary receiver, constant voltage (CV) and constant current (CC) Control circuit, 4.45 V voltage regulator on SECONDARY BYPASS pin, Synchronous rectification MOSFET driver, frequency jitter oscillator and a Host integrated protection function. Figure 3 and Figure 4 show Functional block diagram of the main and sub-controllers Has the most important function.

10. PRIMARY BYPASS Pin Regulator

The PRIMARY BYPASS pin has an internal regulator that charges the PRIMARY BYPASS pin capacitor to VBPP by drawing current from the voltage on the DRAIN pin whenever the power MOSFET is off. The PRIMARY BYPASS pin is the internal supply voltage node. When the power MOSFET is on, the device operates from the energy stored in the PRIMARY BYPASS pin capacitor. Extremely low power consumption of the internal circuitry allows the InnoSwitch-CH to operate continuously from current it takes from the DRAIN pin. In addition, there is a shunt regulator clamping the PRIMARY BYPASS pin voltage to VSHUNT when current is provided to the PRIMARY BYPASS pin through an external resistor. This facilitates powering the InnoSwitch-CH externally through a bias winding to decrease the no-load consumption to less than 10 mW (5 V output design).