IR2308STRPBF

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IR2308STRPBF is a monolithic high- and low-side gate driver IC. It utilizes a high voltage design specifically made for automotive, industrial, and consumer application fields. This device features a low RDS(on) of only 6 mΩ, providing high speed operation and excellent thermal performance. It also features integrated protection features such as overcurrent protection, thermal shutdown, and short circuit protection.

The IR2308STRPBF has two independent high- and low-side drivers and is capable of directly driving MOSFETs and IGBTs for power conversion applications. Its independent inputs, outputs, and voltage regulators make it easy to configure the output for various gate-drive signals. Additionally, it has a wide operating temperature range of -55°C to +150°C as well as a wide operating voltage range of 4.5V to 18V, making it suitable for a variety of applications.

The IR2308STRPBF is designed to provide the highest level of EMI and ESD performance, with no need for external components. It provides fast switching times, even under wide conditions, while at the same time minimizing EMI. It operates at up to 8A of current, making it suitable for medium power applications like motor control, lighting, and power tools. Additionally, its low current consumption makes it perfect for automotive and battery-operated devices.

At the heart of the IR2308STRPBF is its innovative gate driver circuit. This circuit utilizes a dynamic current source architecture and a level shifted, differential input signal. By integrating fast switching times, low power consumption, and superior EMI performance into one device, the IR2308STRPBF is ideal for automotive, industrial, and consumer applications.

In terms of its working principle, the IR2308STRPBF is designed to drive either the high side or low side sides of an IGBT or MOSFET. By applying a logic level signal to the IN pins, the device provides an open collector output at its Q pins, which can then be used to drive an IGBT or MOSFET. The device also features an adjustable dead time to ensure that both the high and low side signals are switched off before the other side is switched on. This ensures that the high and low side switches turn off simultaneously, limiting power losses and improving overall power conversion efficiency.

In conclusion, the IR2308STRPBF is an ideal choice for a variety of medium-power applications due to its high-voltage design, low RDS(on), integrated protection features, and superior EMI and ESD performance. Its fast switching times and low power consumption makes it great for automotive and battery-operated applications, while its gate-driver circuit provides flexibility and accuracy. Furthermore, its adjustable dead time allows for optimal efficiency in power conversion applications, making it a top pick for today\'s power electronics designs.

The specific data is subject to PDF, and the above content is for reference