IR35401MTRPBF Allicdata Electronics
Allicdata Part #:

IR35401MTRPBF-ND

Manufacturer Part#:

IR35401MTRPBF

Price: $ 1.53
Product Category:

Uncategorized

Manufacturer: Infineon Technologies
Short Description: MP - POWIRSTAGE
More Detail: N/A
DataSheet: IR35401MTRPBF datasheetIR35401MTRPBF Datasheet/PDF
Quantity: 1000
1 +: $ 1.53000
10 +: $ 1.48410
100 +: $ 1.45350
1000 +: $ 1.42290
10000 +: $ 1.37700
Stock 1000Can Ship Immediately
$ 1.53
Specifications
Series: *
Part Status: Active
Description

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Introduction

The IR35401MTRPBF is a power transistor from Infineon Technologies AG, a German semiconductor manufacturer. It is commonly used for high frequency amplifiers and is suitable for commercial and industrial applications. It is an N-Channel depletion-mode field-effect transistor (FET) with an operating frequency range of up to 36GHz. IR35401MTRPBF offers low gate leakage current (Ig) and low on-resistance (Rds) to reduce power loss in high frequency applications. This makes the IR35401MTRPBF highly suitable for high-performance, power-sensitive applications in both commercial and industrial fields. Additionally, the IR35401MTRPBF offers excellent thermal stability and dynamic performance.

Application Field of IR35401MTRPBF

The IR35401MTRPBF is suitable for use in high frequency amplifiers and is mainly used for automotive and commercial applications. It can be used in automotive amplifiers, radio receivers, TV receivers, satellite earth stations, cellular base stations and also for communication equipment. It is suitable for power amplifiers, oscillators, pre-amplifiers and amplifiers of various microwave, millimeter-wave and VDSL transceivers. The IR35401MTRPBF can also be used for power supplies, battery chargers, RF amplifiers and medical equipment.

Working Principle of IR35401MTRPBF

The IR35401MTRPBF is a N-channel depletion-mode FET. It operates using the idea of the spreading resistance phenomenon and works on the principle of the transfer of charge carriers between the gate and the source electrodes. When a negative voltage is applied to its gate, a depletion region is formed at the interface between the source and the drain. This depletion region narrows the area in which current can flow through the channel, thus limiting the flow of current through the transistor. The IR35401MTRPBF has a very low gate leakage current which helps to reduce power loss in high frequency applications. Additionally, the dynamic performance of this transistor helps to improve the device’s response time in varying environmental conditions. The IR35401MTRPBF also offers excellent thermal stability and its high frequency capability makes it ideal for high-performance, power-sensitive applications.

Conclusion

The IR35401MTRPBF is a power transistor from Infineon Technologies AG, and is suitable for high frequency amplifiers. It works on the principle of the spreading resistance phenomenon and is used for both commercial and industrial applications. It has a low gate leakage current and low on-resistance, making it highly suitable for power-sensitive applications. Additionally, the IR35401MTRPBF offers excellent thermal stability and high frequency capability. This makes it a great choice for commercial and industrial applications where low power loss, high performance and thermal stability are important.

The specific data is subject to PDF, and the above content is for reference

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