Allicdata Part #: | IRGC4056B-ND |
Manufacturer Part#: |
IRGC4056B |
Price: | $ 1.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT CHIP WAFER |
More Detail: | IGBT Trench 600V 8A Surface Mount Die |
DataSheet: | IRGC4056B Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
3644 +: | $ 0.95371 |
Series: | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
IGBT Type: | Trench |
Moisture Sensitivity Level (MSL): | -- |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 8A |
Vce(on) (Max) @ Vge, Ic: | -- |
Switching Energy: | -- |
Input Type: | Standard |
Td (on/off) @ 25°C: | -- |
Test Condition: | -- |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | Die |
Supplier Device Package: | Die |
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The IRGC4056B is an Insulated Gate Bipolar Transistor (IGBT) module for use in the most demanding Switch Mode Power Supply (SMPS) applications. It is a highly reliable, low loss, single device-based power switch that provides significant advantages when compared to traditional solutions such as standard MOSFETs.
The most important application areas of the IRGC4056B include: current sourcing, current sinking, and soft switching. It is well-suited for AC motor drives, inverter circuits, electronic lighting ballast systems, and other power electronic applications. Furthermore, it is available in a single dual-in-line package (DIP), simplifying circuit board layout.
The IRGC4056B is built on the NPT technology, a proprietary high-temperature fabrication process that combines high-speed switching, high current density, low drive power and temperature stability. This process allows the device to exceed the voltage and current capabilities of conventional IGBTs, while also improving heat transfer and reducing power losses.
This device features a simple design that consists of two self-contained high-voltage, high-current switches, interconnected by an integrated gate driver. Each switch is built on an NPT insulated gate bipolar transistor (IGBT). This configuration provides the foundation for a reliable high-voltage gate control structure that ensures high-speed switching and low power consumption.
Its working principle is based on the charge storage mechanism, allowing it to switch on and off high voltages and currents. The device is triggered by an external gate voltage, which turns the current flow on or off. Its turn-on and turn-off times are therefore determined by the external gate voltage and its applied frequency.
The output of the IRGC4056B is controlled by a low voltage gate drive signal. When the external gate voltage is increased, the device will reach its maximum current sourcing and sinking capability in a very short period of time. The turn-off during short-circuit conditions or overloading can be accurately controlled by the applied gate voltage and the associated delay time.
The device is packed with a variety of features that ensure its optimal performance in a range of applications. It has a built-in suppression circuit which eliminates spurious transient signals generated during the turn-off and switch-on transitions. Furthermore, its reverse polarity protection and robust protection against current over-loads ensure safe operation of the device in a variety of applications. In addition, its thermal and overload protection features protect the device from operating in unsafe conditions.
The IRGC4056B is a versatile and reliable power switch for a wide range of applications, from lighting systems and motor drives to power electronic circuits. With its high current capacity and robust protection features, it is an ideal choice for high-performance power control applications.
The specific data is subject to PDF, and the above content is for reference
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