Allicdata Part #: | IRGC4063B-ND |
Manufacturer Part#: |
IRGC4063B |
Price: | $ 3.49 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT CHIP WAFER |
More Detail: | IGBT Trench 600V 48A Surface Mount Die |
DataSheet: | IRGC4063B Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
998 +: | $ 3.17789 |
Series: | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
IGBT Type: | Trench |
Moisture Sensitivity Level (MSL): | -- |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 48A |
Vce(on) (Max) @ Vge, Ic: | -- |
Switching Energy: | -- |
Input Type: | Standard |
Td (on/off) @ 25°C: | -- |
Test Condition: | -- |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | Die |
Supplier Device Package: | Die |
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The IRGC4063B is a single-gate insulated-gate bipolar transistor (IGBT). Its main application field is switching applications and motor control, as it is an efficient, low-cost device with a low on-state voltage drop. It is also used in free-wheeling diodes, over-voltage and over-current protection, and a range of other industrial lighting applications.
Working Principle
The IRGC4063B is based on the principle of a unipolar transistor. It combines the operating concept of the two main types of transistors: BJT (Bipolar Junction Transistor) and MOSFET (Metal–Oxide–Semiconductor Field-Effect Transistor). When forward biased, electrons move from the N-type semiconductor (e-channel) to the P-type (hole channel) semiconductor as they gain energy to cross the junction.
The IRGC4063B has two peculiarities compared to most other transistors. First, the gate-emitter voltage (Vce) does not have an influence on the current. Second, the current increases exponentially with the temperature increase, up to a certain point, after which the increase is linear. This last peculiarity also affects the saturation voltage of the transistor, meaning that the IRGC4063B must be carefully chosen for the specific application.
In addition to its main applications, the IRGC4063B can also be used in switching converters and choppers, as well as in zero-voltage and zero-voltage reversal halfs. Moreover, the voltage increases exponentially with the temperature increase – an important feature in conditions in which the temperature varies considerably. It is essential to select the right transistor in these conditions, to avoid over-heating of the device.
Limitations and Safeguards
When using the IRGC4063B, it is important to bear in mind the following limitations and safeguards:
- The operating temperature should not exceed 125oC.
- The gate-emitter voltage should not exceed +20V.
- It should be protected from electrostatic discharge.
- Ensure that the power dissipation is kept within limits.
The IRGC4063B is a versatile device which can be used for a wide range of applications, from low-voltage/low-power applications to high-voltage/high-power applications. It is intended for industrial lighting applications, switching converters, over-voltage and over-current protection, and free-wheeling diodes.
The key features of the IRGC4063B include low on-state voltage drop and low cost, along with a fairly linear current vs. temperature increase up to a certain point. These features, combined with its versatility, make the IRGC4063B an efficient and reliable device for use in industrial lighting and other related applications.
The specific data is subject to PDF, and the above content is for reference
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