Allicdata Part #: | IRGC4660B-ND |
Manufacturer Part#: |
IRGC4660B |
Price: | $ 1.54 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT CHIP WAFER |
More Detail: | IGBT Trench Field Stop 600V 48A Surface Mount Die |
DataSheet: | IRGC4660B Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
806 +: | $ 1.40106 |
Switching Energy: | -- |
Supplier Device Package: | Die |
Package / Case: | Die |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Reverse Recovery Time (trr): | 45ns |
Test Condition: | -- |
Td (on/off) @ 25°C: | -- |
Input Type: | Standard |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | -- |
Current - Collector (Ic) (Max): | 48A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | Trench Field Stop |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
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The IRGC4660B is a common base-connected, presaturated, insulated-gate bipolar transistor (IGBT) designed for high-power switching applications. It is an upper part of a series of IGBTs and is manufactured by Infineon Technologies.
The IRGC4660B is an IGBT composed of two power switching devices mounted in a plastic package. It consists of one N-channel MOSFET and one PNP bipolar junction transistor (BJT). The MOSFET has a gate-source voltage of 17 V and a maximum collector-emitter voltage of 600 V. The BJT features a gate-emitter voltage of 8 V and a maximum collector-emitter voltage of 600 V. The maximum power dissipation for the device is 500 W.
The IRGC4660B is ideal for use in applications requiring reliable power switching such as motor control and switched-mode power supplies. It also has a much higher conduction loss than other IGBTs, making it suitable for motor control and power supply applications. Additionally, it has a wide range of operating temperatures, which allows it to be used in various environments. It also has a high frequency switching capability and a lowest driving voltage, which makes it suitable for high-frequency power conversion.
The basic working principle of the IGBT is similar to that of the bipolar junction transistor (BJT). However, the IGBT has better switching characteristics than the BJT. In addition, the IRGC4660B is specially designed for applications in which low signal distortion is required. It can also be used with higher operating frequencies and switching speeds.
The IRGC4660B is designed to be able to efficiently switch higher currents and voltages. It has a higher switching speed than other IGBTs and a high input impedance. The on-state resistance (RDSon) of the device is very low and is suitable for high performance switching applications. The device also provides protection against short circuits, over current and over temperature. The device also offers immunity to electromagnetic interference (EMI) and radiated interference.
In summary, the IRGC4660B is an advanced single-channel IGBT. Its wide range of features makes it ideal for use in applications such as motor control and switched-mode power supplies. Its high operating temperature and its resistance to EMI and radiated interference makes it suitable for high performance switching applications. Its high switching speed and low RDSon make it suitable for applications where high frequency power conversion is required. In addition, the device provides protection against short circuits, over current and over temperature.
The specific data is subject to PDF, and the above content is for reference
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