| Allicdata Part #: | IRS2101SPBF-ND |
| Manufacturer Part#: |
IRS2101SPBF |
| Price: | $ 1.09 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Infineon Technologies |
| Short Description: | IC DRIVER HIGH/LOW SIDE 8-SOIC |
| More Detail: | Half-Bridge Gate Driver IC Non-Inverting 8-SOIC |
| DataSheet: |  IRS2101SPBF Datasheet/PDF |
| Quantity: | 7372 |
| 1 +: | $ 1.09000 |
| 10 +: | $ 1.05730 |
| 100 +: | $ 1.03550 |
| 1000 +: | $ 1.01370 |
| 10000 +: | $ 0.98100 |
Specifications
| Current - Peak Output (Source, Sink): | 290mA, 600mA |
| Base Part Number: | IRS2101SPBF |
| Supplier Device Package: | 8-SOIC |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Rise / Fall Time (Typ): | 70ns, 35ns |
| High Side Voltage - Max (Bootstrap): | 600V |
| Input Type: | Non-Inverting |
| Series: | -- |
| Logic Voltage - VIL, VIH: | 0.8V, 2.5V |
| Voltage - Supply: | 10 V ~ 20 V |
| Gate Type: | IGBT, N-Channel MOSFET |
| Number of Drivers: | 2 |
| Channel Type: | Independent |
| Driven Configuration: | Half-Bridge |
| Part Status: | Active |
| Packaging: | Tube |
Description
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The IRS2101SPBF is a monolithic integrated circuit designed to provide efficient, high-speed, low-loss driving of power MOSFETs and IGBTs in a wide variety of switching applications. It is a Mosfet and IGBT driver which can drive up to 500V and 40A at peak and 150A continuous output currents. It has an internal 2.3A peak bias current to reduce the gate resistors and is designed for a wide range of DC and pulse applications.The IRS2101SPBF gate driver provides an efficient, low-loss solution for driving power MOSFETs and IGBTs. It incorporates a number of features that make it ideal for use in switched mode power supplies, high frequency DC-DC converters and other switching applications. The IRS2101SPBF has a built-in gate driver circuit which is capable of driving both N and P-channel MOSFETs / IGBTs up to 500V and 40A peak and 150A continuous. It features a wide operating voltage range of 3.3 to 14V and a low current consumption of only 0.8mA. It also has an internal bias current of 2.3A peak which helps reduce the need for external gate resistors.The IRS2101SPBF has two independent gate driver outputs. The first output is designed to control the gate driver of an N-channel power MOSFET/IGBT, while the second output is designed to control the gate driver of a P-channel power MOSFET/IGBT. The high peak output current of the driver helps reduce the gate charge of the MOSFET/IGBT and thus improving the efficiency of the system. The driver also features a built-in under-voltage lockout function which prevents MOSFET/IGBTs from being damaged due to low input voltages.The IRS2101SPBF is designed to operate in a wide temperature range from -40°C to 150°C and it is typical for the device to support an ambient temperature of 700°C. The device is well suited for applications that operate in harsh conditions. It is also RoHS compliant which helps ensure its viability for use in a variety of applications.The IRS2101SPBF can be used in a variety of switching applications such as in power conversion and motor speed control. It can be used in boost, buck and SEPIC topologies and is also well suited for use in high frequency switching applications. Its small size and high performance make it ideal for use in portable applications where space is limited. It can also be used in gate drive circuits in applications such as solar inverters, uninterruptible power supplies (UPS) and medium voltage power supplies.In conclusion, the IRS2101SPBF is a versatile, high performance gate driver that is ideal for a wide range of switching applications. Its efficient design reduces power dissipation while its built-in features help ensure safe operation and improved efficiency. Its small size, RoHS compliance and wide temperature range makes it suitable for a variety of portable and harsh environment applications.The specific data is subject to PDF, and the above content is for reference
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