Allicdata Part #: | IRS2509CD-ND |
Manufacturer Part#: |
IRS2509CD |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Infineon Technologies |
Short Description: | IC MOSFET DRIVER |
More Detail: | Gate Driver IC |
DataSheet: | IRS2509CD Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Part Status: | Obsolete |
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IRS2509CD is a high-speed and low-side synchronous gate driver IC designed with CMOS technology, which can directly drive Power MOSFETs or IGBTs. It is designed to drive gate voltages up to 12V and sinks up to 2.5A of gate current. It can withstand a high drain-to-source voltage of up to 500V and is ideal for applications demanding high frequency and current drive capability. The device is provided in an 8-pin SOIC package and is highly reliable due to its SOA protection.
The Application Field and Working Principle of IRS2509CD
The IRS2509CD is mainly used for high-voltage switch mode power supply designs, AC/DC converters, DC/DC converters, induction heating drivers and lighting power converters. It is also suitable for various applications, such as automotive and industrial systems.
The basic working principle of the IRS2509CD is as follows: The front end of the device features two inputs that control the upper and lower high-side switch. When the upper input is triggered, the upper high-side switch will turn on, allowing current to flow from the common pre-charge supply and the upper high-side power rail. Similarly, when the lower input is triggered, the lower high-side switch will be on and current will flow from the pre-charge supply to the lower high-side power rail. To turn off the switch, the respective input will be pulled low.
The two inputs also determine the direction of the current flow from the pre-charge supply to the high-side power rail. If the upper input is triggered first, the current will flow from the pre-charge supply to the upper high-side power rail. The same is true if the lower input is triggered first; the current will flow from the pre-charge supply to the lower high-side power rail.
The internal architecture of the device offers a level of protection against shorted or open-circuit switches, as the outputs of the device are designed to turn off immediately in the case of an over-current or short-circuit event. The protection is designed to shut off the output transistors in under 1us, thus protecting against any damage or release of inductive energy.
The device is also designed to allow for a safe pre-charge process, where the pre-charge voltage is ramped up gradually before the switch is turned on. This prevents large and sudden current surges from the pre-charge supply to the power rails and helps ensure reliable operation of the device.
IRS2509CD gate drivers are an ideal solution for power MOSFETs and IGBTs used in applications demanding high performance and high current handling capability. With its integrated protection features and advanced gate driving capabilities, it is well suited for various switch mode power supply, which require high speed switching and protection from inductive spikes.
The specific data is subject to PDF, and the above content is for reference
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