IRS2103SPBF Allicdata Electronics
Allicdata Part #:

IRS2103SPBF-ND

Manufacturer Part#:

IRS2103SPBF

Price: $ 0.61
Product Category:

Integrated Circuits (ICs)

Manufacturer: Infineon Technologies
Short Description: IC DRIVER HALF-BRIDGE HV 8-SOIC
More Detail: Half-Bridge Gate Driver IC Inverting, Non-Invertin...
DataSheet: IRS2103SPBF datasheetIRS2103SPBF Datasheet/PDF
Quantity: 681
1 +: $ 0.61000
10 +: $ 0.59170
100 +: $ 0.57950
1000 +: $ 0.56730
10000 +: $ 0.54900
Stock 681Can Ship Immediately
$ 0.61
Specifications
Current - Peak Output (Source, Sink): 290mA, 600mA
Base Part Number: IRS2103SPBF
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Rise / Fall Time (Typ): 70ns, 35ns
High Side Voltage - Max (Bootstrap): 600V
Input Type: Inverting, Non-Inverting
Series: --
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Voltage - Supply: 10 V ~ 20 V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Channel Type: Independent
Driven Configuration: Half-Bridge
Part Status: Active
Packaging: Tube 
Description

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The IRS2103SPBF is an integrated circuit used to help control power devices in a power management integrated circuit (PMIC) system. This circuit provides gate control to power MOSFETs and insulated gate bipolar transistors (IGBTs). The package offers an integrated bootstrap structure, and a low gate charge, while ensuring high efficiency and fast switching performance. The IRS2103SPBF application field offers a wide range of power management solutions including automotive, industrial, and telecommunications.

Due to its ability to overcome the limitations of single-ended power switches, the IRS2103SPBF can operate with higher frequencies than its counterparts. This allows for higher efficiency in power management circuits such as power supplies, motor control, and lighting systems. It can work with both voltage-mode and current-mode systems, enabling flexibility in design.

The structure of the IRS2103SPBF is based on two main elements. The main portion includes two outputs for the drive signals, a voltage regulator for the operation of power larger devices, and a PWM decoder for reloading of digital operation. The second part consists of two controlled switches that are used for power switching. These switches can be configured both multichannel and single-channel operation.

The working principle of the IRS2103SPBF is based on the use of two transistors per output: an upper mosfet and a lower n-channel MOSFET, which are arranged in an inverter configuration. An initial oscillation is generated using the bias voltage, and the oscillation frequency is determined by the size of the capacitor connected to the voltage divider network. The output signals can be controlled using the bias, or alternatively by the PWM control input.

The IRS2103SPBF has functions designed specifically to help protect it against voltage, temperature and current transient spikes. The gate drive circuit offers a range of protection features such as reverse current limiting, current limitation, and slope compensation.

In order to ensure the highest level of efficiency, the IRS2103SPBF is integrated with a differential amplifier, which enables the high speed switching of the upper and lower MOSFETs. In addition, it provides a logic level threshold voltage so that the output signal could easily be synchronized with the signal sources of various devices.

Convenient features such as a logic level shift and pulse-by-pulse current limit, provides additional safety during operation. Additionally, the IRS2103SPBF also contains built-in soft start and over-current protection that aid in providing a longer life for the power electronics.

Overall, the IRS2103SPBF is an excellent solution for any power management integrated circuit. It offers both an integrated bootstrap structure, and a low gate charge, while ensuring high efficiency and fast switching performance. With its wide operating temperature range, it can be used in a variety of applications, from automotive and industrial applications to telecommunications.

The specific data is subject to PDF, and the above content is for reference

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