Allicdata Part #: | IRS21084SPBF-ND |
Manufacturer Part#: |
IRS21084SPBF |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Infineon Technologies |
Short Description: | IC DRIVER HALF-BRIDGE 14-SOIC |
More Detail: | Half-Bridge Gate Driver IC Inverting, Non-Invertin... |
DataSheet: | IRS21084SPBF Datasheet/PDF |
Quantity: | 265 |
Current - Peak Output (Source, Sink): | 290mA, 600mA |
Base Part Number: | IRS21084SPBF |
Supplier Device Package: | 14-SOIC |
Package / Case: | 14-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Rise / Fall Time (Typ): | 100ns, 35ns |
High Side Voltage - Max (Bootstrap): | 600V |
Input Type: | Inverting, Non-Inverting |
Series: | -- |
Logic Voltage - VIL, VIH: | 0.8V, 2.5V |
Voltage - Supply: | 10 V ~ 20 V |
Gate Type: | IGBT, N-Channel MOSFET |
Number of Drivers: | 2 |
Channel Type: | Independent |
Driven Configuration: | Half-Bridge |
Part Status: | Active |
Packaging: | Tube |
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Power Management Integrated Circuit (PMIC) are an important component of any system. In the past, multiple discrete components were used to control power flow in different applications. Today, PMIC\'s are used to integrate multiple power control functions into a single integrated circuit. PMICs are used in many real world applications such as power amplifiers, automotive, consumer and medical systems. Gate Drivers are a type of PMIC which can be used to drive power switches in a variety of ways.
The IRS21084SPBF is a special type of gate driver IC developed by Infineon Technologies. It is designed to provide better performance and operational characteristics than existing gate drivers. This IC is available in a range of voltage ranges from 8V to 24V and supports higher turn on/off current. It also has four independent channels for controlling different loads. Thanks to its small size, it can be easily integrated into many systems.
The IRS21084SPBF gate driver is suitable for use in a variety of power management applications in the automotive, consumer, medical and industrial markets. It can be used to control switching power supplies, DC/DC converters, relays, as well as driving high current MOSFETs, IGBTs and other power switches. It is suitable for use in buck, boost, flyback, SEPIC, and Cuk DC/DC converter topologies. It is also capable of driving high power MOSFETs and IGBTs, with up to 1.5A of gate current in each driver.
The IRS21084SPBF gate driver utilizes a special design to minimize total gate charge loss and maximize switching performance. It uses a low gate voltage drop feature to reduce power dissipation and minimize switching losses. In addition, it has an integrated inrush current protection to protect the gate driver from over voltage and inrush current.
The circuit topology of the IRS21084SPBF is based on the push-pull or totem-pole principle. It consists of two driver FETs (PMOS and NMOS) connected in antiparallel. When the input voltage is applied to the driver transistors, the PMOS transistor is on and the NMOS transistor is off. When the input voltage is removed, the NMOS transistor is on and the PMOS transistor is off. This enables the driver to control the high current MOSFETs, IGBTs and other load switches, by allowing the drivers to switch their outputs between high and low levels in response to the input voltage.
The IRS21084SPBF features a wide range of protection features that can protect the driver from failure. It has an integrated thermal shutdown to protect the device from overheating. It also includes over-current protection, which turns off the output when the current exceeds a certain threshold. It also has an over-voltage protection feature which prevents the IC from being damaged by excessive voltages.
Overall, the IRS21084SPBF provides a reliable, high-performance gate driver for a variety of power management applications. With its wide range of protective features and small size, it can be easily integrated into many systems. It provides better performance than existing gate drivers and offers the added advantage of lower power dissipation.
The specific data is subject to PDF, and the above content is for reference
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