IRS2112STRPBF Allicdata Electronics
Allicdata Part #:

IRS2112STRPBF-ND

Manufacturer Part#:

IRS2112STRPBF

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Infineon Technologies
Short Description: IC DVR HI/LO SIDE 16-SOIC
More Detail: Half-Bridge Gate Driver IC Non-Inverting 16-SOIC
DataSheet: IRS2112STRPBF datasheetIRS2112STRPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Current - Peak Output (Source, Sink): 290mA, 600mA
Base Part Number: IRS2112SPBF
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Rise / Fall Time (Typ): 75ns, 35ns
High Side Voltage - Max (Bootstrap): 600V
Input Type: Non-Inverting
Series: --
Logic Voltage - VIL, VIH: 6V, 9.5V
Voltage - Supply: 10 V ~ 20 V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Channel Type: Independent
Driven Configuration: Half-Bridge
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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PMIC - Gate Drivers: IRS2112STRPBF application field and working principle

Power Metal-Oxide-Semiconductor Field-Effect Transistors (PowerMOSFETs) are used in converters and other switching systems, thanks to their high efficiency and low loss. However, without sufficient drive signals and control circuitry, they cannot be utilized effectively. This is where gate driver ICs (Integrated Circuits) such as the IRS2112STRPBF come in to play. This article explains the application field and working principle of this particular gate driver.

Application Field

The IRS2112STRPBF gate driver is optimized for efficiently driving high- and low-side N-channel MOSFETs, IGBTs, and other power components in high-performance, high efficiency converters. It offers a wide voltage range of 4.0 to 40V, allowing it to operate from a wide range of power sources. It also features a low propagation delay, low shoot-through current, and low operating current, making it suitable for high speed switching applications. In addition, its built-in under-voltage lockout, overtemperature shutdown and curve-settings ensure safe and reliable operation of the power module. The driver is designed for a wide range of power conversion applications, such as motor control, switching high-power LEDs, and server power systems.

Working Principle

The IRS2112STRPBF gate driver consists of two main parts. The first part is the high-side MOSFET driver, also known as the upper driver. This driver has two outputs, called high-side (VS) and low-side (VGNN). These outputs are used to switch the upper and lower sides of the MOSFETs, respectively. The second part is the lower driver, which has two outputs, called High-side low-side (HSLS) and high-side (HSLG). These outputs are responsible for switching the upper and lower sides of the IGBTs, respectively. When an enable signal is applied to the enable pin (EN), the upper and lower drivers are enabled, and the MOSFETs and IGBTs will be driven accordingly. The voltage at the enable input determines the slew rate of the outputs, allowing for flexible voltage control of the driver. The current limit of the driver is adjustable using external resistors, and can be set from 4A to 10A. The driver features built-in slew-rate control and dead-time control, which allows for smooth and efficient operation of the power module.The IRS2112STRPBF gate driver is a high performance driver designed for driving high- and low-side N-channel MOSFETs, IGBTs, and other power components in converters and other switching systems. It offers a wide voltage range, a low operating current, and several built-in protective features, allowing it to be used in a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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