Allicdata Part #: | IRS2117SPBF-ND |
Manufacturer Part#: |
IRS2117SPBF |
Price: | $ 1.39 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Infineon Technologies |
Short Description: | IC DRIVER MOSFET/IGBT 1CH 8-SOIC |
More Detail: | High-Side Gate Driver IC Non-Inverting 8-SOIC |
DataSheet: | IRS2117SPBF Datasheet/PDF |
Quantity: | 1245 |
1 +: | $ 1.26630 |
10 +: | $ 1.13463 |
100 +: | $ 0.91218 |
500 +: | $ 0.74945 |
1000 +: | $ 0.62097 |
Current - Peak Output (Source, Sink): | 290mA, 600mA |
Base Part Number: | IRS2117SPBF |
Supplier Device Package: | 8-SOIC |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Rise / Fall Time (Typ): | 75ns, 35ns |
High Side Voltage - Max (Bootstrap): | 600V |
Input Type: | Non-Inverting |
Series: | -- |
Logic Voltage - VIL, VIH: | 6V, 9.5V |
Voltage - Supply: | 10 V ~ 20 V |
Gate Type: | IGBT, N-Channel MOSFET |
Number of Drivers: | 1 |
Channel Type: | Single |
Driven Configuration: | High-Side |
Part Status: | Active |
Packaging: | Tube |
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The IRS2117SPBF is a high-speed MOSFET/IGBT gate driver with the ability to deliver high peak current that can easily and reliably drive a wide range of MOSFETs and IGBTs. It has a wide range of advantages compared to other gate drivers, including fast rise and fall times, low input voltage thresholds, high output current capability, and enhanced thermal protection. In this article, we discuss the application field and working principle of IRS2117SPBF.
IRS2117SPBF\'s Application Field:
The IRS2117SPBF is a rate-optimized, quad-channel gate driver for high-speed IGBTs and MOSFETs. It can be used in a wide range of applications, including power management, motor control, and digital audio amplifiers. In particular, IRS2117SPBF can be used for high-current pulse applications such as welding, DC to AC inverters, and battery management systems.
IRS2117SPBF\'s Working Principle:
IRS2117SPBF is an integrated gate driver circuit with an onboard LDO regulator. It features a self-oscillating charge-pump output stage that allows the device to drive both power MOSFETs and IGBTs with high output current capability. The device is capable of driving high rail-to-rail drain voltage. It reveals that IR, RDS(ON) and Qg variations have a low effect on the device.
The device has an input logic level of 5V. It supports up to 5A Peek Gate Source and Peak Gate Drain Drive with a maximum supply voltage of 17V. The operating temperature is between -40℃ to 150℃. The IRS2117SPBF also features a current-sensing bootstrap diode for watchdog applications, over-voltage protection, and a truck pre-charge circuit.
The part uses push-pull logic with inverted input signals, which allow for more accurate control of the gate. This is important for systems that require extremely fast switching times. The device also features an improved gate charge-discharge performance and is capable of driving multiple power switches in parallel.
In conclusion, the IRS2117SPBF is a rate-optimized, quad-channel gate driver for high-speed MOSFETs and IGBTs. It is well suited for applications that require fast switching times, increased output current capability, and improved thermal protection. It can be used in a wide range of applications, including power management, motor control, and digital audio amplifiers.
The specific data is subject to PDF, and the above content is for reference
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