Allicdata Part #: | IRS21271STRPBFTR-ND |
Manufacturer Part#: |
IRS21271STRPBF |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Infineon Technologies |
Short Description: | IC DVR CURRENT SENSE 1CH 8-SOIC |
More Detail: | High-Side Gate Driver IC Non-Inverting 8-SOIC |
DataSheet: | IRS21271STRPBF Datasheet/PDF |
Quantity: | 1000 |
Current - Peak Output (Source, Sink): | 290mA, 600mA |
Base Part Number: | IRS21271SPBF |
Supplier Device Package: | 8-SOIC |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Rise / Fall Time (Typ): | 80ns, 40ns |
High Side Voltage - Max (Bootstrap): | 600V |
Input Type: | Non-Inverting |
Series: | -- |
Logic Voltage - VIL, VIH: | 0.8V, 2.5V |
Voltage - Supply: | 9 V ~ 20 V |
Gate Type: | IGBT, N-Channel MOSFET |
Number of Drivers: | 1 |
Channel Type: | Single |
Driven Configuration: | High-Side |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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.PMIC - Gate Drivers
IRS21271STRPBF is a high efficiency MOSFET gate driver for electrical power conversion applications. This device is specifically designed for modern power converter applications, requiring complex control of devices such as H-bridge cascoded MOSFETs, IGBTs, BJTs and gate turn-off thyristors. It provides high-speed switching, tight gate control and low gate voltage requirements for the most demanding power applications.
Application Field
The IRS21271STRPBF gate driver is an ideal solution for applications requiring tight control of power devices, especially power converters such as dc/dc converters, ac/dc converters, switched mode power supplies, motor controllers, etc. It is also widely used in solar micro-inverters and automotive electric power steering.
Working Principle
The IRS21271STRPBF gate driver consists of two half-bridges composed of MOSFETs in a cascode configuration. Depending on the device power requirement, one of the two half-bridges can be used for charging the gate and the other one for discharging it. The total current into the drain-source of the device is kept low when the gate voltage is not being switched by the half-bridges.
The device also includes various levels of built-in protection. It includes Over-Voltage Protection, Under-Voltage Protection, Over-Current Protection and Thermal Shutdown. The device is also capable of surviving momentary open-circuit of the gate under extreme conditions.
Conclusion
The high-speed, high-efficiency MOSFET gate driver IRS21271STRPBF provides tight control of power devices for power conversion applications. It is capable of withstanding short circuit and other fault conditions and has built-in protection features for enhanced reliability. With its wide range of application fields and its excellent performance, the IRS21271STRPBF is an ideal solution for modern power conversion needs.
The specific data is subject to PDF, and the above content is for reference
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