IRS2127STRPBF Integrated Circuits (ICs)

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Driven Configuration:	High-Side
Channel Type:	Single
Number of Drivers:	1
Gate Type:	IGBT, N-Channel MOSFET
Voltage - Supply:	12 V ~ 20 V
Logic Voltage - VIL, VIH:	0.8V, 2.5V
Current - Peak Output (Source, Sink):	290mA, 600mA
Input Type:	Non-Inverting
High Side Voltage - Max (Bootstrap):	600V
Rise / Fall Time (Typ):	80ns, 40ns
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SOIC
Base Part Number:	IRS2127SPBF

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PMIC - Gate Drivers: IRS2127STRPBF Application Field and Working Principle

PMIC - Gate Drivers are an important type of power supply and management components widely used in various information systems and devices. IRS2127STRPBF is one of the most promising gate drivers, providing excellent hard and soft-switching capabilities for high and low side MOSFETs. The design of the IRS2127STRPBF gate driver is optimized for driving high current MOSFETs and IGBTs. This section will discuss its application field and working principle.

Application Field

The IRS2127STRPBF provides high performance and convenience for precise control of high and low side MOSFETs, enabling it to be widely used in inverters, HEMSs and EV chargers. Its drive stages are compatible with various power sources and can be tailored to meet the various operating conditions. Industry-leading features of the IRS2127STRPBF include: Low voltage losses, High level of isolation and Control logic isolation, Internal oscillator and frequency prescalers, Short pulses, Soft and hard turn-off, High modulation accuracy and Duty cycle correction, High PWM accuracy, Fast response time and Error status monitoring. It furthers provides Secondary side sensing and current limiting, low output resistance and higher efficiency.

Working Principle

The IRS2127STRPBF consists of two identical drive stages, each containing its own set of common control terminal switches and internal circuitry that collectively form the power electronics core of the device. The two control terminals—input on the left and output on the right—are connected together in a fashion that allows for both phase-switching and the implementation of Gate Driver Control logic signals. At each phase, the two control terminals are connected to two independent switches. Each switch is composed of several pairs of independent MOSFETs in parallel with various diodes. The output of each control terminal is connected to its corresponding power element via dedicated output FETs and internal MOSFETs. The parallel combination of the two is what helps to provide the high level of power density that IRS2127STRPBF is capable of providing. The control logic for the IRS2127STRPBF is derived from an internal oscillator that provides a PWM signal for controlling the on/off cycles of the switch elements. This oscillator is further connected to a frequency prescaler to reduce the time period of the signal. The control logic is then routed to the output switch via a dedicated control gate such that the gate drive is directed in the opposite direction during high/low side switching of the output switches.

Conclusion

The IRS2127STRPBF is a powerful gate driver, versatile enough to be used in a variety of applications. Its low voltage losses, high level of isolation, and integrated control logic enable precise control of high and low side MOSFETs. Its internal oscillator and frequency prescaler provide a signal with a short pulse width and high modulation accuracy. Additionally, its secondary side sensing and current limiting provide higher efficiency and lower output resistance. These features, along with the fast response times, enable the IRS2127STRPBF to be an excellent choice for use with HEMS, EV chargers, and inverters.

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