IRS2607DSTRPBF Integrated Circuits (ICs) |
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Allicdata Part #: | IRS2607DSTRPBFTR-ND |
Manufacturer Part#: |
IRS2607DSTRPBF |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Infineon Technologies |
Short Description: | IC DVR MOSFET/IGBT N-CH 8-SOIC |
More Detail: | Half-Bridge Gate Driver IC Non-Inverting 8-SOIC |
DataSheet: | IRS2607DSTRPBF Datasheet/PDF |
Quantity: | 1000 |
Current - Peak Output (Source, Sink): | 200mA, 350mA |
Base Part Number: | IRS2607DSPBF |
Supplier Device Package: | 8-SOIC |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Rise / Fall Time (Typ): | 150ns, 50ns |
High Side Voltage - Max (Bootstrap): | 600V |
Input Type: | Non-Inverting |
Series: | -- |
Logic Voltage - VIL, VIH: | 0.8V, 2.2V |
Voltage - Supply: | 10 V ~ 20 V |
Gate Type: | IGBT, N-Channel MOSFET |
Number of Drivers: | 2 |
Channel Type: | Independent |
Driven Configuration: | Half-Bridge |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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PMIC stands for power management integrated circuit. PMICs are a broad category of integrated circuits that integrate the controllers and field effect transistors (FETs) required to power, protect, monitor, and switch power in an embedded system. The PMIC can include a variety of features such as over-current protection, under-voltage protection, voltage regulation, temperature sensing, over-temperature protection, fan control, and other power management functions.Gate drivers are a type of power management integrated circuits that are designed to drive or turn on power MOSFETs and other similar power switching devices. Gate drivers primarily serve to reduce the necessary driving voltage of the logic-level MOSFET and reduce the gate capacitance of the low-voltage FET. This serves to shorten the switching time and reduce the voltage loss during the switching process. The IRS2607DSTRPBF is a driver IC from Infineon Technologies and is specifically designed for driving N-channel and P-channel MOSFETs in such applications as electric vehicles, industrial, and solar power inverters. The device is made in a small 3mm X 3mm, 8-pin ultra-miniature form factor with an operating temperature range of -40°C to +125°C. It features a wide input voltage range of 4.5-36 V, a high-side and a low-side gate driver, a built-in bootstrap diode, and a number of protection functions including load dump, under-voltage lockout, over-voltage lockout, current limit, and over-temperature protection.The IRS2607DSTRPBF employs a number of technologies to enhance the efficiency of the power MOSFETs it is driving. It employs a temperature-compensated full-wave body diode, which helps to minimize MOSFET losses and maintain the lowest possible switching losses and temperature rise. The body diode is also continuously monitored with patented feedback circuitry to ensure maximum reliability in the system. Additionally, the device is able to operate at switching frequencies up to 1 MHz, allowing for higher efficiency in applications with large-scale MOSFETs. The IRS2607DSTRPBF also features an internal current limitation circuit with an adjustable hysteresis. This circuit limits the peak current in each of the high and low-side channels, allowing the device to operate with very low gate capacitance MOSFETs and, in turn, reducing switching time and power consumption. The IRS2607DSTRPBF, with its wide range of features, is well-suited for applications that require high efficiency, high speed, and high reliability. It is especially useful in high-power applications such as motor control, solar and wind power inverters, and industrial equipment.
The specific data is subject to PDF, and the above content is for reference
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