IS43DR16160A-25EBL

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IS43DR16160A-25EBL is an ideal choice for various applications due to its advanced semiconductor technology in the field of memory. The product is a highly reliable 4M x 16 Double Data Rate 4 Synchronous DRAM with Transfer Rate up to 1600M data/s and a single 2.5V power supply. It provides two banks, each bank is equipped with 8 independent 8Kbyte (8192 x 8/9 bits) page mode. The page mode burst can access up to 8 consecutive words with only one bank.

The Register Set of IS43DR16160A-25EBL is organized as an array of registers. Register 0 selects the Bank Address, Register 1 selects the Command type (read/write/refresh/precharge) and Register 2 select the Column Address while Register 3 select the Row Address. The write data is stored in the Write Data Buffer, when the write command is issued, the write data will be transferred from the Write Data Buffer to the selected memory cell on the DRAM.

IS43DR16160A-25EBL can support three access types, namely burst for 8 words assembled from bank 0 and bank 1, burst for 4 words limited to the same bank and single word access. The high-speed operations for read and write are realized by applying the various clocks such as CLK, nCK, nCE and nCS. The CLK is used to maintain the synchronization between the internal latch circuits. The nCK is used to drive the data I/O pins of the memory while the nCE is used to drive the address pins of the memory.

In addition to its good performance, IS43DR16160A-25EBL also has an advanced low power operation. Active power is minimized by employing a single 2.5V power supply while the self-refresh operation is designed to minimize the active power driven. Both of these features ensure the power efficiency of the device. The refreshing is automatically managed by the Refresh Logic and the Refresh Timer built in the device, this information can be accessible by the Internal Registers.

IS43DR16160A-25EBL has many applications due to its excellent performance and power efficiency. These applications include but not limited to IC card, controllers and notebook computers, digital cameras and many other portable electronic devices. It is also widely used in many industrial applications, such as automotive and medical systems, which require high reliability, speed and low power consumption.

In summary, IS43DR16160A-25EBL is a reliable and high-speed 4M x 16 Double Data Rate 4 Synchronous DRAM with excellent power efficiency and low power consumption. It has good performance and is suitable for a wide range of memory applications such as IC card, controllers, notebook computers, digital cameras and many other portable electronic devices.

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