IS43DR86400E-25DBLI Allicdata Electronics
Allicdata Part #:

706-1560-ND

Manufacturer Part#:

IS43DR86400E-25DBLI

Price: $ 5.94
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 512M PARALLEL 60TWBGA
More Detail: SDRAM - DDR2 Memory IC 512Mb (64M x 8) Parallel 40...
DataSheet: IS43DR86400E-25DBLI datasheetIS43DR86400E-25DBLI Datasheet/PDF
Quantity: 291
1 +: $ 5.39910
Stock 291Can Ship Immediately
$ 5.94
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 512Mb (64M x 8)
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TWBGA (8x10.5)
Description

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IS43DR86400E-25DBLI are DRAM chips used in Memory applications. DRAM stands for dynamic random access memory. DRAMs are a type of random access memory that stores data bits in integrated circuit elements called capacitors. The capacitors have a charge that must be refreshed in order to retain data. DRAMs provide fast random access memory, but they are slower than static random access memory (SRAM).

The IS43DR86400E-25DBLI is a 512Mb device that operates with a voltage range from 1.8 to 2.5 Volts. It has 18 address pins, 8 data pins, 13 control pins and a reference voltage/power pin. The device is organized as 4 banks of 16M x 8 bits and is packaged as a TSOP. This device offers fast access times, high density and low power consumption. Thanks to their small size, these chips can be used in many devices, including cameras, cellular phones and gaming consoles.

The main principle of operation of a DRAM memory chip is to store data in capacitors which leak charge with time. The memory cells are constructed from transistors which are connected to the capacitors. When data is written to the DRAM, the transistors receive a voltage pulse and change their states to charge the capacitors. A read operation is performed by sensing the charge in the capacitors. The data is then interpreted as either a 0 or a 1 based on the charge present on the capacitor.

In order to maintain the data stored in the capacitors, a refresh cycle must be performed periodically. This is done by sending a refresh command to all memory cells. All memory cells in the row are read and then written back with the same values stored in them. This restores the charges in the capacitors and keeps the data stored for a longer period of time.

The IS43DR86400E-25DBLI memory chip is a versatile and powerful device that can be used in Memory applications. It offers fast access times, high density and low power consumption which makes it suitable for many different types of applications. Its refresh cycle helps to maintain the integrity of data stored in the memory cells. This device can be found in many devices such as cameras, cellular phones and gaming consoles. With its versatile and powerful features, the IS43DR86400E-25DBLI is a great choice for Memory applications.

The specific data is subject to PDF, and the above content is for reference

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