IS43DR16128C-3DBL Allicdata Electronics
Allicdata Part #:

706-1567-ND

Manufacturer Part#:

IS43DR16128C-3DBL

Price: $ 7.92
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 2G PARALLEL 84TWBGA
More Detail: SDRAM - DDR2 Memory IC 2Gb (128M x 16) Parallel 33...
DataSheet: IS43DR16128C-3DBL datasheetIS43DR16128C-3DBL Datasheet/PDF
Quantity: 98
1 +: $ 7.20090
Stock 98Can Ship Immediately
$ 7.92
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 2Gb (128M x 16)
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 450ps
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 84-TFBGA
Supplier Device Package: 84-TWBGA (8x12.5)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IS43DR16128C-3DBL Memory Application Field and Working Principle

IS43DR16128C-3DBL memory is an important type of semiconductor memory which is used in a wide range of applications including consumer electronics, IT projects, industrial computers and more. It is a DDR3 synchronous DRAM based memory device featuring an 8-bit data bus and is capable of operating within a frequency range of 1333MHz-1600MHz. Furthermore, the device comes equipped with a flexible and low power supply, allowing it to be used in a variety of applications.

Device Overview and Working Design

The IS43DR16128C-3DBL memory device is based around a 1Gb (128M words by 8 bits) array of synchronous DRAMs with a 1K bank architecture. The DRAMs are organized into four 8-bit banks, two 16-bit banks, two 32-bit banks and two 64-bit banks with a burst length of 4, 4x and 8. The device is designed to operate with a core voltage of 1.5V± 0.1V and supports a wide range of operating temperatures for both industrial and commercial applications (-40°C to 95°C).

The device features a burst mode of operation, whereby data is written or read from memory in response to a single command. The burst length refers to the number of consecutive words that can be accessed from one single memory access. This synchronous burst mode of operation provides fast access time and is ideal for use in applications where high speed data access is essential such as HPC (High Performance Computing).

Key Features and Specifications

IS43DR16128C-3DBL memory devices are manufactured using high quality and reliable components, making them an ideal option for a wide range of applications. Some of the key features and specifications include:

  • 1Gb DQS (Data Queuing System) - supports low latency data transfers.
  • 8-bit data bus width and a wide operating frequency range of 1333MHz-1600MHz.
  • 1K –Bank Architecture.
  • Burst length of 4, 4x and 8.
  • 2x/4x sequence detection.
  • Internal or external clock.
  • Low power supply voltage of 1.5V± 0.1V and operating temperature range of -40°C to 95°C.
  • Compact, reliable and cost-effective.

Application Fields of IS43DR16128C-3DBL Memory

The high performance and quality of IS43DR16128C-3DBL memory make it an ideal choice for a range of applications. This memory device is most commonly used in consumer electronics and IT projects such as digital TVs, gaming consoles, set-top boxes, media players, tablets and other embedded device controllers. It is also an ideal choice for industrial computers, servers and communication systems.

Additionally, the device’s high stability and dependability make it a reliable choice for mission critical applications that demand data accuracy and security. It is also ideal for applications where speed is essential as the device is capable of achieving superb data transfer rates on account of its burst mode of operation.

Conclusion

IS43DR16128C-3DBL memory is an excellent type of synchronous DRAM which is widely applicable in a range of applications. Due to the exceptional quality and performance of the device, it is mostly used in consumer electronics, IT projects, industrial computers and other embedded device controllers. Furthermore, the device is capable of delivering superior data transfer speeds and is also suitable for mission critical applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "IS43" Included word is 40
Part Number Manufacturer Price Quantity Description
IS43DR86400E-3DBL ISSI, Integr... 2.73 $ 32 IC DRAM 512M PARALLEL 60T...
IS43DR81280C-3DBL ISSI, Integr... -- 46 IC DRAM 1G PARALLEL 60TWB...
IS43R86400F-5TL ISSI, Integr... -- 43 IC DRAM 512M PARALLEL 66T...
IS43R16320F-6TLI ISSI, Integr... 6.01 $ 95 IC DRAM 512M PARALLEL 66T...
IS43DR81280C-3DBLI ISSI, Integr... 6.2 $ 30 IC DRAM 1G PARALLEL 60TWB...
IS43R86400F-5TLI ISSI, Integr... 6.4 $ 29 IC DRAM 512M PARALLEL 66T...
IS43DR16128C-3DBL ISSI, Integr... 7.92 $ 98 IC DRAM 2G PARALLEL 84TWB...
IS43DR82560C-3DBL ISSI, Integr... 8.16 $ 1000 IC DRAM 2G PARALLEL 60TWB...
IS43LD16640C-25BLI ISSI, Integr... -- 57 IC DRAM 1G PARALLEL 134TF...
IS43LD32320C-25BLI ISSI, Integr... -- 84 IC DRAM 1G PARALLEL 134TF...
IS43TR85120A-125KBLI ISSI, Integr... -- 68 IC DRAM 4G PARALLEL 78TWB...
IS43DR16128C-3DBLI ISSI, Integr... -- 34 IC DRAM 2G PARALLEL 84TWB...
IS43DR16128C-25DBLI ISSI, Integr... -- 27 IC DRAM 2G PARALLEL 84TWB...
IS43DR82560C-25DBLI ISSI, Integr... 14.84 $ 50 IC DRAM 2G PARALLEL 60TWB...
IS43TR16128C-15HBLI ISSI, Integr... -- 190 IC DRAM 2G PARALLEL 96TWB...
IS43DR16128B-25EBL ISSI, Integr... 15.23 $ 137 IC DRAM 2G PARALLEL 84TWB...
IS43R16160F-6BLI ISSI, Integr... 4.68 $ 29 IC DRAM 256M PARALLEL 60T...
IS43TR81280BL-125JBLI ISSI, Integr... 6.95 $ 50 IC DRAM 1G PARALLEL 78TWB...
IS43TR82560BL-125KBLI ISSI, Integr... 9.32 $ 39 IC DRAM 2G PARALLEL 78TWB...
IS43LR32640A-6BL ISSI, Integr... 11.91 $ 50 IC DRAM 2G PARALLEL 90WBG...
IS43LR32640A-6BLI ISSI, Integr... 13.1 $ 50 IC DRAM 2G PARALLEL 90WBG...
IS43R16160D-6TL ISSI, Integr... -- 1595 IC DRAM 256M PARALLEL 66T...
IS43DR16640C-25DBL ISSI, Integr... -- 942 IC DRAM 1G PARALLEL 84TWB...
IS43TR16640B-125JBL ISSI, Integr... 3.34 $ 364 IC DRAM 1G PARALLEL 96TWB...
IS43TR16640BL-125JBL ISSI, Integr... 3.44 $ 479 IC DRAM 1G PARALLEL 96TWB...
IS43TR16128B-15HBL ISSI, Integr... 4.31 $ 152 IC DRAM 2G PARALLEL 96TWB...
IS43DR16640B-3DBLI ISSI, Integr... -- 2630 IC DRAM 1G PARALLEL 84TWB...
IS43TR85120AL-125KBL ISSI, Integr... -- 219 IC DRAM 4G PARALLEL 78TWB...
IS43DR16640B-25DBLI ISSI, Integr... -- 755 IC DRAM 1G PARALLEL 84WBG...
IS43TR16128CL-125KBLI ISSI, Integr... -- 556 IC DRAM 2G PARALLEL 96TWB...
IS43TR16128B-125KBLI ISSI, Integr... -- 340 IC DRAM 2G PARALLEL 96TWB...
IS43DR16128B-25EBLI ISSI, Integr... -- 26 IC DRAM 2G PARALLEL 84TWB...
IS43DR16640B-25DBL ISSI, Integr... -- 432 IC DRAM 1G PARALLEL 84WBG...
IS43R16160D-6BL ISSI, Integr... 5.26 $ 9 IC DRAM 256M PARALLEL 60T...
IS43TR16128B-125KBL ISSI, Integr... -- 389 IC DRAM 2G PARALLEL 96TWB...
IS43DR16320E-3DBLI ISSI, Integr... 5.08 $ 1000 IC DRAM 512M PARALLEL 84T...
IS43TR16512B-125KBL ISSI, Integr... 16.77 $ 1000 IC DRAM 8G PARALLEL 96FBG...
IS43TR16512B-125KBLI ISSI, Integr... -- 1000 IC DRAM 8G PARALLEL 96FBG...
IS43TR16512BL-125KBL ISSI, Integr... -- 1000 IC DRAM 8G PARALLEL 96FBG...
IS43TR16512BL-125KBLI ISSI, Integr... -- 2411 IC DRAM 8G PARALLEL 96FBG...
Latest Products
MT53D512M64D4NZ-053 WT ES...

IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...

MT53D512M64D4NZ-053 WT ES:D TR Allicdata Electronics
ECF620AAACN-C1-Y3-ES

LPDDR3 6G DIE 192MX32Memory IC

ECF620AAACN-C1-Y3-ES Allicdata Electronics
MT53B384M64D4NK-053 WT ES...

IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...

MT53B384M64D4NK-053 WT ES:B Allicdata Electronics
70V25S45J

IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...

70V25S45J Allicdata Electronics
71321LA55JI8

IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...

71321LA55JI8 Allicdata Electronics
7027L55PFI8

IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...

7027L55PFI8 Allicdata Electronics