Allicdata Part #: | 706-1567-ND |
Manufacturer Part#: |
IS43DR16128C-3DBL |
Price: | $ 7.92 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ISSI, Integrated Silicon Solution Inc |
Short Description: | IC DRAM 2G PARALLEL 84TWBGA |
More Detail: | SDRAM - DDR2 Memory IC 2Gb (128M x 16) Parallel 33... |
DataSheet: | IS43DR16128C-3DBL Datasheet/PDF |
Quantity: | 98 |
1 +: | $ 7.20090 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - DDR2 |
Memory Size: | 2Gb (128M x 16) |
Clock Frequency: | 333MHz |
Write Cycle Time - Word, Page: | 15ns |
Access Time: | 450ps |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.9 V |
Operating Temperature: | 0°C ~ 85°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 84-TFBGA |
Supplier Device Package: | 84-TWBGA (8x12.5) |
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IS43DR16128C-3DBL Memory Application Field and Working Principle
IS43DR16128C-3DBL memory is an important type of semiconductor memory which is used in a wide range of applications including consumer electronics, IT projects, industrial computers and more. It is a DDR3 synchronous DRAM based memory device featuring an 8-bit data bus and is capable of operating within a frequency range of 1333MHz-1600MHz. Furthermore, the device comes equipped with a flexible and low power supply, allowing it to be used in a variety of applications.
Device Overview and Working Design
The IS43DR16128C-3DBL memory device is based around a 1Gb (128M words by 8 bits) array of synchronous DRAMs with a 1K bank architecture. The DRAMs are organized into four 8-bit banks, two 16-bit banks, two 32-bit banks and two 64-bit banks with a burst length of 4, 4x and 8. The device is designed to operate with a core voltage of 1.5V± 0.1V and supports a wide range of operating temperatures for both industrial and commercial applications (-40°C to 95°C).
The device features a burst mode of operation, whereby data is written or read from memory in response to a single command. The burst length refers to the number of consecutive words that can be accessed from one single memory access. This synchronous burst mode of operation provides fast access time and is ideal for use in applications where high speed data access is essential such as HPC (High Performance Computing).
Key Features and Specifications
IS43DR16128C-3DBL memory devices are manufactured using high quality and reliable components, making them an ideal option for a wide range of applications. Some of the key features and specifications include:
- 1Gb DQS (Data Queuing System) - supports low latency data transfers.
- 8-bit data bus width and a wide operating frequency range of 1333MHz-1600MHz.
- 1K –Bank Architecture.
- Burst length of 4, 4x and 8.
- 2x/4x sequence detection.
- Internal or external clock.
- Low power supply voltage of 1.5V± 0.1V and operating temperature range of -40°C to 95°C.
- Compact, reliable and cost-effective.
Application Fields of IS43DR16128C-3DBL Memory
The high performance and quality of IS43DR16128C-3DBL memory make it an ideal choice for a range of applications. This memory device is most commonly used in consumer electronics and IT projects such as digital TVs, gaming consoles, set-top boxes, media players, tablets and other embedded device controllers. It is also an ideal choice for industrial computers, servers and communication systems.
Additionally, the device’s high stability and dependability make it a reliable choice for mission critical applications that demand data accuracy and security. It is also ideal for applications where speed is essential as the device is capable of achieving superb data transfer rates on account of its burst mode of operation.
Conclusion
IS43DR16128C-3DBL memory is an excellent type of synchronous DRAM which is widely applicable in a range of applications. Due to the exceptional quality and performance of the device, it is mostly used in consumer electronics, IT projects, industrial computers and other embedded device controllers. Furthermore, the device is capable of delivering superior data transfer speeds and is also suitable for mission critical applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
IS43DR86400E-3DBL | ISSI, Integr... | 2.73 $ | 32 | IC DRAM 512M PARALLEL 60T... |
IS43DR81280C-3DBL | ISSI, Integr... | -- | 46 | IC DRAM 1G PARALLEL 60TWB... |
IS43R86400F-5TL | ISSI, Integr... | -- | 43 | IC DRAM 512M PARALLEL 66T... |
IS43R16320F-6TLI | ISSI, Integr... | 6.01 $ | 95 | IC DRAM 512M PARALLEL 66T... |
IS43DR81280C-3DBLI | ISSI, Integr... | 6.2 $ | 30 | IC DRAM 1G PARALLEL 60TWB... |
IS43R86400F-5TLI | ISSI, Integr... | 6.4 $ | 29 | IC DRAM 512M PARALLEL 66T... |
IS43DR16128C-3DBL | ISSI, Integr... | 7.92 $ | 98 | IC DRAM 2G PARALLEL 84TWB... |
IS43DR82560C-3DBL | ISSI, Integr... | 8.16 $ | 1000 | IC DRAM 2G PARALLEL 60TWB... |
IS43LD16640C-25BLI | ISSI, Integr... | -- | 57 | IC DRAM 1G PARALLEL 134TF... |
IS43LD32320C-25BLI | ISSI, Integr... | -- | 84 | IC DRAM 1G PARALLEL 134TF... |
IS43TR85120A-125KBLI | ISSI, Integr... | -- | 68 | IC DRAM 4G PARALLEL 78TWB... |
IS43DR16128C-3DBLI | ISSI, Integr... | -- | 34 | IC DRAM 2G PARALLEL 84TWB... |
IS43DR16128C-25DBLI | ISSI, Integr... | -- | 27 | IC DRAM 2G PARALLEL 84TWB... |
IS43DR82560C-25DBLI | ISSI, Integr... | 14.84 $ | 50 | IC DRAM 2G PARALLEL 60TWB... |
IS43TR16128C-15HBLI | ISSI, Integr... | -- | 190 | IC DRAM 2G PARALLEL 96TWB... |
IS43DR16128B-25EBL | ISSI, Integr... | 15.23 $ | 137 | IC DRAM 2G PARALLEL 84TWB... |
IS43R16160F-6BLI | ISSI, Integr... | 4.68 $ | 29 | IC DRAM 256M PARALLEL 60T... |
IS43TR81280BL-125JBLI | ISSI, Integr... | 6.95 $ | 50 | IC DRAM 1G PARALLEL 78TWB... |
IS43TR82560BL-125KBLI | ISSI, Integr... | 9.32 $ | 39 | IC DRAM 2G PARALLEL 78TWB... |
IS43LR32640A-6BL | ISSI, Integr... | 11.91 $ | 50 | IC DRAM 2G PARALLEL 90WBG... |
IS43LR32640A-6BLI | ISSI, Integr... | 13.1 $ | 50 | IC DRAM 2G PARALLEL 90WBG... |
IS43R16160D-6TL | ISSI, Integr... | -- | 1595 | IC DRAM 256M PARALLEL 66T... |
IS43DR16640C-25DBL | ISSI, Integr... | -- | 942 | IC DRAM 1G PARALLEL 84TWB... |
IS43TR16640B-125JBL | ISSI, Integr... | 3.34 $ | 364 | IC DRAM 1G PARALLEL 96TWB... |
IS43TR16640BL-125JBL | ISSI, Integr... | 3.44 $ | 479 | IC DRAM 1G PARALLEL 96TWB... |
IS43TR16128B-15HBL | ISSI, Integr... | 4.31 $ | 152 | IC DRAM 2G PARALLEL 96TWB... |
IS43DR16640B-3DBLI | ISSI, Integr... | -- | 2630 | IC DRAM 1G PARALLEL 84TWB... |
IS43TR85120AL-125KBL | ISSI, Integr... | -- | 219 | IC DRAM 4G PARALLEL 78TWB... |
IS43DR16640B-25DBLI | ISSI, Integr... | -- | 755 | IC DRAM 1G PARALLEL 84WBG... |
IS43TR16128CL-125KBLI | ISSI, Integr... | -- | 556 | IC DRAM 2G PARALLEL 96TWB... |
IS43TR16128B-125KBLI | ISSI, Integr... | -- | 340 | IC DRAM 2G PARALLEL 96TWB... |
IS43DR16128B-25EBLI | ISSI, Integr... | -- | 26 | IC DRAM 2G PARALLEL 84TWB... |
IS43DR16640B-25DBL | ISSI, Integr... | -- | 432 | IC DRAM 1G PARALLEL 84WBG... |
IS43R16160D-6BL | ISSI, Integr... | 5.26 $ | 9 | IC DRAM 256M PARALLEL 60T... |
IS43TR16128B-125KBL | ISSI, Integr... | -- | 389 | IC DRAM 2G PARALLEL 96TWB... |
IS43DR16320E-3DBLI | ISSI, Integr... | 5.08 $ | 1000 | IC DRAM 512M PARALLEL 84T... |
IS43TR16512B-125KBL | ISSI, Integr... | 16.77 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
IS43TR16512B-125KBLI | ISSI, Integr... | -- | 1000 | IC DRAM 8G PARALLEL 96FBG... |
IS43TR16512BL-125KBL | ISSI, Integr... | -- | 1000 | IC DRAM 8G PARALLEL 96FBG... |
IS43TR16512BL-125KBLI | ISSI, Integr... | -- | 2411 | IC DRAM 8G PARALLEL 96FBG... |
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