
Allicdata Part #: | 706-1375-ND |
Manufacturer Part#: |
IS43TR16640B-125JBLI |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ISSI, Integrated Silicon Solution Inc |
Short Description: | IC DRAM 1G PARALLEL 96TWBGA |
More Detail: | SDRAM - DDR3 Memory IC 1Gb (64M x 16) Parallel 800... |
DataSheet: | ![]() |
Quantity: | 3 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - DDR3 |
Memory Size: | 1Gb (64M x 16) |
Clock Frequency: | 800MHz |
Write Cycle Time - Word, Page: | 15ns |
Access Time: | 20ns |
Memory Interface: | Parallel |
Voltage - Supply: | 1.425 V ~ 1.575 V |
Operating Temperature: | -40°C ~ 95°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 96-TFBGA |
Supplier Device Package: | 96-TWBGA (9x13) |
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Memory technology has evolved to the point where it is necessary to meet the ever-rising demand for faster and larger storage capacities across a wide array of areas. IS43TR16640B-125JBLI is one such example of the advanced memory technology that is currently available. This article will provide an overview of the application field and working principle of this particular memory module.
IS43TR16640B-125JBLI Overview
The IS43TR16640B-125JBLI is a high-speed synchronous dynamic random-access memory (SDRAM) module. It is a smaller form-factor memory module with a capacity of 16 GB and an operating speed of up to 860 MHz. As a DDR3 SDRAM, it uses double data rate to achieve higher transfer rates than conventional SDRAM. This module provides an ideal solution for applications that require high memory capacity and low latency for mission-critical workloads such as networking, databases, messaging systems and other demanding systems.
Operating Principle
The IS43TR16640B-125JBLI uses the double data rate (DDR) technique to transfer data at a high rate of speed. This is achieved by transferring date on both the rising and falling edges of the clock signal. The clock signal causes the signal transfer to occur in a certain order, which allows for multiple signal transfers on the same clock cycle. This increases the data transfer rate compared to conventional methods.
In addition, the IS43TR16640B-125JBLI uses a technique called Dynamic Random Access Memory (DRAM) to store data. DRAM is a type of non-volatile memory technology that uses an array of capacitors to store data. The capacitors in DRAM are charged to represent a 0 and discharged to represent a 1. DRAM operates by storing data by alternating between charge and discharge states.
The IS43TR16640B-125JBLI also relies on a technique known as error correction code (ECC) to ensure data accuracy. ECC is a method of detecting and correcting transmission errors that may occur during data transfer. Errors are detected by the system, which then uses an algorithm to generate an error correcting code to repair the errors. ECC ensures that data is not corrupted during transmission and that all data is delivered accurately.
Application Fields
The IS43TR16640B-125JBLI is a high-performance memory module designed to meet the needs of most modern, demanding applications. This module can be used in a variety of applications, including:
- High-performance servers and networking equipment
- Data centers and cloud computing
- Multi-media and entertainment
- High performance computing (HPC)
- Embedded systems
- Medical and industrial images.
In addition, the IS43TR16640B-125JBLI can be used in a wide range of other applications, including PCs and notebooks, aerospace, telecommunications, and automotive infotainment systems.
The high performance of this memory module makes it an ideal choice for applications that require large memory capacities and low latency. The fact that it uses ECC ensures that data is not corrupted during transmission. In addition, the module’s smaller form factor makes it a great fit for applications that lack space for conventional memory solutions.
Conclusion
The IS43TR16640B-125JBLI is a high-performance memory module that is designed to meet the needs of demanding applications. Its small form factor, high capacity, and fast speed make it an ideal choice for applications that require large memory capacities and low latency. In addition, its use of error correction code (ECC) technology ensures that data is not corrupted during transmission. This memory module can be used in a variety of applications, including high-performance servers, data centers, and multi-media systems.
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Part Number | Manufacturer | Price | Quantity | Description |
---|
IS43TR16512AL-125KBL | ISSI, Integr... | -- | 6492 | IC DRAM 8G PARALLEL 96LFB... |
IS43DR16128C-25DBLI | ISSI, Integr... | -- | 27 | IC DRAM 2G PARALLEL 84TWB... |
IS43DR82560C-25DBLI | ISSI, Integr... | 14.84 $ | 50 | IC DRAM 2G PARALLEL 60TWB... |
IS43R16160D-6TL-TR | ISSI, Integr... | 2.03 $ | 1000 | IC DRAM 256M PARALLEL 66T... |
IS43DR16640C-25DBLI-TR | ISSI, Integr... | -- | 1000 | IC DRAM 1G PARALLEL 84TWB... |
IS43R16160D-6TL | ISSI, Integr... | -- | 1595 | IC DRAM 256M PARALLEL 66T... |
IS43TR16128B-125KBLI | ISSI, Integr... | -- | 340 | IC DRAM 2G PARALLEL 96TWB... |
IS43R16160D-5BL-TR | ISSI, Integr... | 3.88 $ | 1000 | IC DRAM 256M PARALLEL 60T... |
IS43LD32640B-18BPLI-TR | ISSI, Integr... | 8.51 $ | 1000 | IC DRAM 2G PARALLEL 533MH... |
IS43TR85120A-15HBLI-TR | ISSI, Integr... | 10.1 $ | 1000 | IC DRAM 4G PARALLEL 78TWB... |
IS43DR16320D-25DBL-TR | ISSI, Integr... | 1.95 $ | 1000 | IC DRAM 512M PARALLEL 84T... |
IS43DR16128C-3DBL-TR | ISSI, Integr... | 5.47 $ | 1000 | IC DRAM 2G PARALLEL 84TWB... |
IS43TR82560C-125KBLI | ISSI, Integr... | 6.69 $ | 1000 | IC DRAM 2G PARALLEL 78TWB... |
IS43LD32640B-18BPLI | ISSI, Integr... | 9.54 $ | 1000 | IC DRAM 2G PARALLEL 533MH... |
IS43LR16800F-6BLI-TR | ISSI, Integr... | 0.0 $ | 1000 | IC DRAM 128M PARALLEL 60T... |
IS43DR82560B-3DBLI | ISSI, Integr... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 60TWB... |
IS43R16160B-6TLI-TR | ISSI, Integr... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 66T... |
IS43TR16128AL-125KBLI | ISSI, Integr... | -- | 1000 | IC DRAM 2G PARALLEL 96TWB... |
IS43LD16128B-18BLI | ISSI, Integr... | 8.96 $ | 1000 | IC DRAM 2G PARALLEL 533MH... |
IS43LR16160G-6BLI-TR | ISSI, Integr... | 4.66 $ | 1000 | IC DRAM 256M PARALLEL 60T... |
IS43DR16640B-25DBLI-TR | ISSI, Integr... | -- | 1000 | IC DRAM 1G PARALLEL 84WBG... |
IS43TR16128BL-125KBLI | ISSI, Integr... | -- | 1000 | IC DRAM 2G PARALLEL 96TWB... |
IS43R16160D-5TLI | ISSI, Integr... | -- | 1000 | IC DRAM 256M PARALLEL 66T... |
IS43DR16320E-3DBLI-TR | ISSI, Integr... | -- | 1000 | IC DRAM 512M PARALLEL 84T... |
IS43TR16256AL-107MBL | ISSI, Integr... | -- | 1000 | IC DRAM 4G PARALLEL 96TWB... |
IS43DR16160A-3DBLI | ISSI, Integr... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 84T... |
IS43LR32400F-6BLI-TR | ISSI, Integr... | 0.0 $ | 1000 | IC DRAM 128M PARALLEL 90T... |
IS43TR16128BL-15HBL | ISSI, Integr... | 4.32 $ | 748 | IC DRAM 2G PARALLEL 96TWB... |
IS43R16320F-5TLI-TR | ISSI, Integr... | -- | 1000 | IC DRAM 512M PARALLEL 200... |
IS43DR16160A-3DBI | ISSI, Integr... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 84T... |
IS43LR16800F-6BL | ISSI, Integr... | -- | 1000 | IC DRAM 128M PARALLEL 60T... |
IS43LR32800G-6BLI-TR | ISSI, Integr... | 4.96 $ | 1000 | IC DRAM 256M PARALLEL 90T... |
IS43DR16320D-3DBLI | ISSI, Integr... | -- | 1000 | IC DRAM 512M PARALLEL 84T... |
IS43TR81280B-107MBL | ISSI, Integr... | 5.53 $ | 1000 | IC DRAM 1G PARALLEL 78TWB... |
IS43TR82560C-15HBLI | ISSI, Integr... | 6.36 $ | 1000 | IC DRAM 2G PARALLEL 78TWB... |
IS43LR16320B-6BL | ISSI, Integr... | 6.73 $ | 1000 | IC DRAM 512M PARALLEL 60T... |
IS43LR16400C-6BLI | ISSI, Integr... | 2.88 $ | 1000 | IC DRAM 64M PARALLEL 60TF... |
IS43DR16320C-3DBLI | ISSI, Integr... | 5.39 $ | 1000 | IC DRAM 512M PARALLEL 84T... |
IS43R16320D-6BLI-TR | ISSI, Integr... | -- | 1000 | IC DRAM 512M PARALLEL 60T... |
IS43R86400D-5TLI | ISSI, Integr... | 6.58 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
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