IS43DR16640A-3DBL Allicdata Electronics
Allicdata Part #:

706-1123-ND

Manufacturer Part#:

IS43DR16640A-3DBL

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 1G PARALLEL 84TWBGA
More Detail: SDRAM - DDR2 Memory IC 1Gb (64M x 16) Parallel 333...
DataSheet: IS43DR16640A-3DBL datasheetIS43DR16640A-3DBL Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gb (64M x 16)
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 450ps
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 84-TFBGA
Supplier Device Package: 84-TWBGA (8x13.65)
Description

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IS43DR16640A-3DBL memory is an advanced type of semiconductor memory that has become popular in the computing industry due to its reliability and high performance. It is used in a variety of applications, including personal computers, servers, and embedded systems. The IS43DR16640A-3DBL memory is a DRAM (Dynamic Random Access Memory) chip that offers superior speed and low power consumption compared to other DRAM chips.The IS43DR16640A-3DBL memory is available in two configurations: single-sided and double-sided. Single-sided chips are usually used in desktop computers and embedded systems, while double-sided chips are often used in servers and higher-end systems. Both types of chips provide the same performance, but double-sided chips offer better scalability and higher capacities.The IS43DR16640A-3DBL memory works by storing data in a two-dimensional matrix of memory cells arranged in a grid pattern. Each row is assigned a physical address in order to store and retrieve data. Data is then accessed from the memory cells by sending data signals from the address bus. The signals are then sent to the memory cells to induce a change in the electrical charge stored within the memory cell, which is then read and written to the address bus.The IS43DR16640A-3DBL memory is equipped with an Error Correction Code (ECC) circuit that can detect and correct errors in the data stored in the memory cells. This helps to ensure that data is not corrupted during read and write operations. ECC can also be used to detect and recover corrupt data, reducing the chance of data loss.The IS43DR16640A-3DBL memory is a popular choice for a variety of applications, including desktop, laptop, and enterprise systems. It is an ideal option for system designers who need memory that is fast, reliable, and efficient, while still providing high density and capacity. In addition, the IS43DR16640A-3DBL memory is compatible with most existing memory technologies, which makes it easy to integrate into existing systems.In terms of applications, IS43DR16640A-3DBL memory is used in a wide variety of computing systems and electronic devices. It is an ideal choice for embedded systems such as mobile phone, digital cameras, and automotive systems. The IS43DR16640A-3DBL memory is also popular in server systems, due to its fast and reliable performance. Additionally, it is a popular choice for use in high-end gaming systems and personal computers that require large amounts of memory.Overall, the IS43DR16640A-3DBL memory is a reliable, high-performance semiconductor memory that is suitable for a variety of applications. It offers an ideal balance between speed, capacity, scalability, and efficiency, making it a popular choice for a range of computing and electronic devices. Its ECC circuit helps to ensure the integrity and reliability of the stored data, and its compatibility with existing memory technologies makes it an easy option for system designers and engineers to integrate into new and existing systems.

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