IS43DR16640B-3DBL Allicdata Electronics
Allicdata Part #:

706-1202-ND

Manufacturer Part#:

IS43DR16640B-3DBL

Price: $ 3.52
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 1G PARALLEL 84TWBGA
More Detail: SDRAM - DDR2 Memory IC 1Gb (64M x 16) Parallel 333...
DataSheet: IS43DR16640B-3DBL datasheetIS43DR16640B-3DBL Datasheet/PDF
Quantity: 421
1 +: $ 3.52000
10 +: $ 3.41440
100 +: $ 3.34400
1000 +: $ 3.27360
10000 +: $ 3.16800
Stock 421Can Ship Immediately
$ 3.52
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gb (64M x 16)
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 450ps
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 84-TFBGA
Supplier Device Package: 84-TWBGA (8x12.5)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IS43DR16640B-3DBL is a type of integrated static random access memory, abbreviated as ISRAM. It is usually used to store and execute data, as well as transfer data, in various electronic devices. This type of memory is widely used in many different fields, including but not limited to medical equipment, telecommunications, automotive, industrial control, consumer products and aerospace. This article will discuss the application field and working principle of IS43DR16640B-3DBL.

IS43DR16640B-3DBL is a 4M × 16-bit static random access memory. Compared with dynamic random access memory, static random access memory retains the data stored in memory and does not need frequent refreshing. This makes ISRAM more suitable for markets where cost is an important factor.

The IS43DR16640B-3DBL can be used in many types of applications, including system memory and cache memory. Since the ISRAM can store data without frequently refreshing, it has a more reliable read/write operation, making it suitable for use in medical equipment, telecommunications, automotive, industrial control, consumer products and aerospace, etc. In addition, the lower power consumption of ISRAM can help reduce the overall power consumption, which is important for various electronic applications.

The working principle of the IS43DR16640B-3DBL is basically the same as that of other static random access memories. It uses flip-flops, each containing two latches, to store the data. When data needs to be written, the write signal is sent to the first latch of the flip-flop, and the signal is processed in sequence by the second latch and finally written into the memory. During read operation, the same process occurs in reverse, allowing the memory data to be accessed.

The IS43DR16640B-3DBL, like all static random access memories, offers high speed and low power consumption. It also provides reliable data retention and data storage. In addition, it is popular for its simple structure and low price. Therefore, it is often used in medical equipment, telecommunications, automotive, industrial control, consumer products and aerospace.

In conclusion, the IS43DR16640B-3DBL is a 4M × 16-bit static random access memory that is suitable for many types of applications. It offers high speed and low power consumption, and its simple structure and low price make it popular in many fields. Finally, its data retention and storage capabilities make it ideal for use in medical equipment, telecommunications, automotive, industrial control, consumer products and aerospace.

The specific data is subject to PDF, and the above content is for reference

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