IS43DR81280C-3DBLI

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IS43DR81280C-3DBLI is a type of dynamic random access memory (DRAM) which is widely used in mobile applications. It is a high-performance memory chip that improves on traditional DRAM technology by increasing the power efficiency and addressing speed of the chip.

The IS43DR81280C-3DBLI is a 64Mb synchronous dynamic random access (SDRA) memory chip, manufactured by Integrated Circuit Solutions (ICS), that enables higher memory chip performance and power efficiency. It is a high-performance memory array with a 0.5V operating voltage range, achieving a 5% power saving compared to the 1.8V conventional operating voltage. It is also pin-compatible with DDR2 memory, making it highly suitable for mobile memory application needs.

The IS43DR81280C-3DBLI incorporates a DRA (DRAM Address Input Multiplexer) that allows for faster access and detection of memory addresses. It also features an embedded DDR read buffer (DRB) and write buffer (CWB) that enable improved memory transaction performance. The embedded DRB and CWB both allow for read and write operations to be achieved in parallel and increase the data transfer rate of the chip. In addition, the chip is equipped with a static refresh option with a maximum of 8192 refresh cycles per second (refresh rate). This provides an enhanced level of data reliability for the memory. All these features make the IS43DR81280C-3DBLI suitable for high-performance applications such as gaming, graphics, and video.

The IS43DR81280C-3DBLI implements a number of features to increase latency and data transfer speed. It uses a High-Density Logical Switch Combining Technology (HLST) to reduce latency. HLST increases input voltage range and reduces gate delay through the use of an advanced circuit design. This increases the logic performance of the chip and provides faster data transfer. IS43DR81280C-3DBLI also incorporates a DRAM Output Level Manager (OLM) which reads data from the memory array, reduces the read access latency, and increases the data transfer speed. Additionally, it uses an advanced multi-chip package (MCP) which reduces the number of input buffers and allows for faster data transfer.

The IS43DR81280C-3DBLI utilizes a Low-Power SDRAM (LPSDRAM) to reduce power consumption and extend battery life of mobile devices. Its low-voltage and fast access speed make it the ideal memory for power-sensitive and performance-oriented applications. Its wide temperature range from 0 to 70 Celsius makes it suitable for a wide array of applications. In addition, this memory chip also features ECC (Error Correction Code) which helps to improve reliability and data integrity.

The IS43DR81280C-3DBLI DRAM is a high-performance, low-power memory chip designed for mobile applications. It features a number of features that enable faster data transfer and reduce power consumption. Its wide temperature range and ECC support make it suitable for a range of applications. It is pin-compatible with most DDR2 memory and is an ideal choice for those who require a reliable and power-efficient memory chip for their mobile device.

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