IS43TR81280B-125JBL-TR Allicdata Electronics
Allicdata Part #:

IS43TR81280B-125JBL-TR-ND

Manufacturer Part#:

IS43TR81280B-125JBL-TR

Price: $ 2.51
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 1G PARALLEL 78TWBGA
More Detail: SDRAM - DDR3 Memory IC 1Gb (128M x 8) Parallel 800...
DataSheet: IS43TR81280B-125JBL-TR datasheetIS43TR81280B-125JBL-TR Datasheet/PDF
Quantity: 1000
2000 +: $ 2.28690
Stock 1000Can Ship Immediately
$ 2.51
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 1Gb (128M x 8)
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-TWBGA (8x10.5)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is a major data processing component that stores and retrieves data for a computer system or device. IS43TR81280B-125JBL-TR is a type of memory designed for embedded applications involving low-power solutions and limited space. It is a cost-effective, highly reliable solution that helps system designers reduce their overall project cost without compromising performance or reliability. In this article, we will be discussing the application field and working principle of IS43TR81280B-125JBL-TR memory.

Application Field

IS43TR81280B-125JBL-TR memory is primarily used in embedded applications such as automotive telematics, smart home and industrial automation systems, and other embedded systems. The memory is suitable for applications where limited space and low power consumption is a primary concern. It is also well-suited to projects requiring high data integrity and is rugged enough to withstand environmental extremes. Furthermore, its large capacity makes it perfect for applications that require a large amount of data storage in a compact space.

Working Principle

IS43TR81280B-125JBL-TR memory is based on the traditional DRAM architecture, but instead of storing each bit in a separate cell, it uses two-bit cells. This two-bit cell architecture allows for more flexibility and reduced power consumption while still providing high-density storage, which is beneficial for embedded applications. The memory controller manages the storage and retrieval of data by controlling the sense amps, which detect the state of each cell, and the write drivers, which write data to the cells. Data can be written and read in either a random access or sequential access manner.

At the core of the IS43TR81280B-125JBL-TR memory is a Self-Refresh Circuit that helps to minimize power consumption. This circuit is used to refresh the memory cells on a regular basis, keeping them in an active state and ensuring their integrity. Additionally, the device features an advanced low-power system, which reduces overall power consumption by up to 50 percent compared to similar devices.

Conclusion

IS43TR81280B-125JBL-TR memory is a reliable and cost-effective solution for embedded applications that require both high-density storage and low power consumption. Its two-bit cell architecture enables flexibility while still providing high data integrity, and its self-refresh circuitry and advanced low-power system minimize power consumption. With its large storage capacity and robust design, IS43TR81280B-125JBL-TR memory is an ideal solution for a wide range of embedded applications.

The specific data is subject to PDF, and the above content is for reference

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