IS62C256AL-45TLI-TR

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IS62C256AL-45TLI-TR is an 8-kilobit high-speed static random access memory (SRAM). It is pin and function compatible with the widely accepted 512Kx8 CMOS SRAM, IS62C256AL, and offers the same levels of performance, power, and reliability. IS62C256AL-45TLI-TR is suited for battery-backed, high performance, and high-speed applications.

Application Field for IS62C256AL-45TLI-TR

IS62C256AL-45TLI-TR is suitable for high performance, battery-backed applications. It is commonly used in cellular phones, PDAs, automotive control systems, industrial controllers, medical equipment, military systems, and electronic instrumentation. The device can also be used in non-volatile memory (NVM), FPGAs, ASICs, and other embedded systems.

IS62C256AL-45TLI-TR is a non-volatile memory device and can easily store data in non-volatile memory. It can also be used in mission critical and time-sensitive applications as it can offer high speed, low power, and long endurance. The device is also ideal for applications that require re-configurability and reliable storage of critical data.

Working Principle

IS62C256AL-45TLI-TR is a static memory device that utilizes CMOS technology. Its internal structure comprises of a single-step access circuit and 8K-bit of CAMAC array structure. This device has an access time of 45ns and is capable of operating at very low current consumption. The device’s noise margin is great and provides good noise immunity. The device is fabricated using high-speed silicon-on-insulator (SOI) technology.

IS62C256AL-45TLI-TR can be programmed via CMOS input/output signals and has an address-change detection circuit. It has an independent power source which helps in power conservation and saves power. Additionally, it has an on-chip error-correction logic that allows the memory contents to be easily monitored and programmed.

IS62C256AL-45TLI-TR also has an on-chip self-test circuit (STC) that implements ‘go/no-go’ tests to check the memory contents. The device also has an integrated-circuit-test (ICT) that can detect any errors or inconsistencies in the memory contents. Finally, it has a ‘burst-access’ feature which allows for faster access of data.

Conclusion

In conclusion, IS62C256AL-45TLI-TR is an 8-kilobit high-speed static random access memory device. It is suitable for battery-backed, high performance, and high-speed applications. The device utilizes CMOS technology and has an access time of 45ns and is capable of operating at very low current consumption. Additionally, it has an on-chip error-correction logic and self-test circuit, as well as an integrated-circuit-test, that can detect any errors or inconsistencies. The ‘burst-access’ feature of the device also allows for faster access of data. Therefore, the IS62C256AL-45TLI-TR can be ideal for applications requiring re-configurability and reliable storage of critical data.

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